Datasheet

PIC18F1230/1330
 2009 Microchip Technology Inc. DS39758D-page 281
TABLE 23-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M — E/W -40C to +85C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time 3.59 4.10 4.86 ms
D123 TRETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
1M 10M — E/W -40°C to +85°C
D125 I
DDP Supply Current during
Programming
—10—mA
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40C to +85C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133A T
IW Self-Timed Write Cycle Time 1.79 2.05 2.43 ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—10—mA
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 for a more detailed discussion on data EEPROM endurance.