Datasheet

© 2007 Microchip Technology Inc. DS39605F-page 69
PIC18F1220/1320
7.3 Reading the Data EEPROM
Memory
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD
control bit (EECON1<7>) and then set control bit, RD
(EECON1<0>). The data is available for the very next
instruction cycle; therefore, the EEDATA register can
be read by the next instruction. EEDATA will hold this
value until another read operation, or until it is written to
by the user (during a write operation).
7.4 Writing to the Data EEPROM
Memory
To write an EEPROM data location, the address must
first be written to the EEADR register and the data
written to the EEDATA register. The sequence in
Example 7-2 must be followed to initiate the write cycle.
The write will not begin if this sequence is not exactly
followed (write 55h to EECON2, write AAh to EECON2,
then set WR bit) for each byte. It is strongly recom-
mended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
After a write sequence has been initiated, EECON1,
EEADR and EEDATA cannot be modified. The WR bit
will be inhibited from being set unless the WREN bit is
set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM Interrupt Flag bit
(EEIF) is set. The user may either enable this interrupt
or poll this bit. EEIF must be cleared by software.
7.5 Write Verify
Depending on the application, good programming
practice may dictate that the value written to the
memory should be verified against the original value.
This should be used in applications where excessive
writes can stress bits near the specification limit.
7.6 Protection Against Spurious Write
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
EXAMPLE 7-1: DATA EEPROM READ
EXAMPLE 7-2: DATA EEPROM WRITE
MOVLW DATA_EE_ADDR ;
MOVWF EEADR ; Data Memory Address to read
BCF EECON1, EEPGD ; Point to DATA memory
BSF EECON1, RD ; EEPROM Read
MOVF EEDATA, W ; W = EEDATA
MOVLW DATA_EE_ADDR ;
MOVWF EEADR ; Data Memory Address to write
MOVLW DATA_EE_DATA ;
MOVWF EEDATA ; Data Memory Value to write
BCF EECON1, EEPGD ; Point to DATA memory
BSF EECON1, WREN ; Enable writes
BCF INTCON, GIE ; Disable Interrupts
MOVLW 55h ;
Required MOVWF EECON2 ; Write 55h
Sequence MOVLW AAh ;
MOVWF EECON2 ; Write AAh
BSF EECON1, WR ; Set WR bit to begin write
BSF INTCON, GIE ; Enable Interrupts
SLEEP ; Wait for interrupt to signal write complete
BCF EECON1, WREN ; Disable writes