Datasheet

ManualsBrandsMICROCHIP TECHNOLOGY ManualsMicrocontrollers, Microprocessors & QuartzesEmbedded microcontroller SSOP 20 8-Bit 40 MHz I/O number 16

Table Of Contents

Low-Power Features:
Oscillators:
Peripheral Highlights:
Special Microcontroller Features:
Pin Diagrams
Table of Contents
Most Current Data Sheet
Errata
Customer Notification System
1.0 Device Overview
- 1.1 New Core Features
  - 1.1.1 Nanowatt Technology
  - 1.1.2 Multiple Oscillator Options and Features
- 1.2 Other Special Features
- 1.3 Details on Individual Family Members
2.0 Oscillator Configurations
- 2.1 Oscillator Types
- 2.2 Crystal Oscillator/Ceramic Resonators
- 2.3 HSPLL
  - FIGURE 2-3: PLL Block Diagram
- 2.4 External Clock Input
  - FIGURE 2-4: External Clock Input Operation (EC Configuration)
  - FIGURE 2-5: External Clock Input Operation (ECIO Configuration)
- 2.5 RC Oscillator
  - FIGURE 2-6: RC Oscillator Mode
  - FIGURE 2-7: RCIO Oscillator Mode
- 2.6 Internal Oscillator Block
- 2.7 Clock Sources and Oscillator Switching
  - 2.7.1 Oscillator Control Register
    - FIGURE 2-8: PIC18F1220/1320 Clock Diagram
    - Register 2-2: OSCCON Register
  - 2.7.2 Oscillator Transitions
- 2.8 Effects of Power Managed Modes on the Various Clock Sources
- 2.9 Power-up Delays
  - TABLE 2-3: OSC1 and OSC2 Pin States in Sleep Mode
3.0 Power Managed Modes
- 3.1 Selecting Power Managed Modes
- 3.2 Sleep Mode
- 3.3 Idle Modes
- 3.4 Run Modes
- 3.5 Wake from Power Managed Modes
- 3.6 INTOSC Frequency Drift
4.0 Reset
- FIGURE 4-1: Simplified Block Diagram of On-Chip Reset Circuit
- 4.1 Power-on Reset (POR)
  - FIGURE 4-2: External Power-on Reset Circuit (for Slow Vdd Power-up)
- 4.2 Power-up Timer (PWRT)
- 4.3 Oscillator Start-up Timer (OST)
- 4.4 PLL Lock Time-out
- 4.5 Brown-out Reset (BOR)
- 4.6 Time-out Sequence
5.0 Memory Organization
- FIGURE 5-1: Program Memory Map and Stack for PIC18F1220
- 5.1 Program Memory Organization
  - FIGURE 5-2: Program Memory Map and Stack for PIC18F1320
- 5.2 Return Address Stack
- 5.3 Fast Register Stack
  - EXAMPLE 5-1: Fast Register Stack Code Example
- 5.4 PCL, PCLATH and PCLATU
- 5.5 Clocking Scheme/Instruction Cycle
- 5.6 Instruction Flow/Pipelining
  - FIGURE 5-4: Clock/Instruction Cycle
  - EXAMPLE 5-2: Instruction Pipeline Flow
- 5.7 Instructions in Program Memory
  - FIGURE 5-5: Instructions in Program Memory
  - 5.7.1 Two-Word Instructions
    - EXAMPLE 5-3: Two-Word Instructions
- 5.8 Look-up Tables
  - 5.8.1 Computed GOTO
    - EXAMPLE 5-4: Computed GOTO Using an Offset Value
  - 5.8.2 Table Reads/Table Writes
- 5.9 Data Memory Organization
  - 5.9.1 General Purpose Register File
    - FIGURE 5-6: Data Memory Map for PIC18F1220/1320 Devices
  - 5.9.2 Special Function Registers
    - TABLE 5-1: Special Function Register Map for PIC18F1220/1320 Devices
    - TABLE 5-2: Register File Summary (PIC18F1220/1320)
- 5.10 Access Bank
- 5.11 Bank Select Register (BSR)
  - FIGURE 5-7: Direct Addressing
- 5.12 Indirect Addressing, INDF and FSR Registers
  - EXAMPLE 5-5: How to Clear RAM (Bank 1) Using Indirect Addressing
  - 5.12.1 Indirect Addressing Operation
    - FIGURE 5-8: Indirect Addressing Operation
    - FIGURE 5-9: Indirect Addressing
- 5.13 Status Register
  - Register 5-2: Status Register
- 5.14 RCON Register
  - Register 5-3: RCON Register
6.0 Flash Program Memory
- 6.1 Table Reads and Table Writes
  - FIGURE 6-1: Table Read Operation
  - FIGURE 6-2: Table Write Operation
- 6.2 Control Registers
- 6.3 Reading the Flash Program Memory
  - FIGURE 6-4: Reads from Flash Program Memory
  - EXAMPLE 6-1: Reading a Flash Program Memory Word
- 6.4 Erasing Flash Program Memory
  - 6.4.1 Flash Program Memory Erase Sequence
    - EXAMPLE 6-2: Erasing a Flash Program Memory Row
- 6.5 Writing to Flash Program Memory
- 6.6 Flash Program Operation During Code Protection
  - TABLE 6-2: Registers Associated with Program Flash Memory
7.0 Data EEPROM Memory
- 7.1 EEADR
- 7.2 EECON1 and EECON2 Registers
  - Register 7-1: EECON1 Register
- 7.3 Reading the Data EEPROM Memory
- 7.4 Writing to the Data EEPROM Memory
- 7.5 Write Verify
- 7.6 Protection Against Spurious Write
  - EXAMPLE 7-1: Data EEPROM Read
  - EXAMPLE 7-2: Data EEPROM Write
- 7.7 Operation During Code-Protect
- 7.8 Using the Data EEPROM
  - EXAMPLE 7-3: Data EEPROM Refresh Routine
  - TABLE 7-1: Registers Associated with Data EEPROM Memory
8.0 8 X 8 Hardware Multiplier
- 8.1 Introduction
  - TABLE 8-1: Performance Comparison
- 8.2 Operation
9.0 Interrupts
- FIGURE 9-1: Interrupt Logic
- 9.1 INTCON Registers
- 9.2 PIR Registers
  - Register 9-4: PIR1: Peripheral Interrupt Request (Flag) Register 1
  - Register 9-5: PIR2: Peripheral Interrupt Request (Flag) Register 2
- 9.3 PIE Registers
  - Register 9-6: PIE1: Peripheral Interrupt Enable Register 1
  - Register 9-7: PIE2: Peripheral Interrupt Enable Register 2
- 9.4 IPR Registers
  - Register 9-8: IPR1: Peripheral Interrupt Priority Register 1
  - Register 9-9: IPR2: Peripheral Interrupt Priority Register 2
- 9.5 RCON Register
  - Register 9-10: RCON Register
- 9.6 INTn Pin Interrupts
- 9.7 TMR0 Interrupt
- 9.8 PORTB Interrupt-on-Change
- 9.9 Context Saving During Interrupts
  - EXAMPLE 9-1: Saving Status, WREG and BSR Registers in RAM
10.0 I/O Ports
- FIGURE 10-1: Generic I/O Port Operation
- 10.1 PORTA, TRISA and LATA Registers
- 10.2 PORTB, TRISB and LATB Registers
11.0 Timer0 Module
- Register 11-1: T0CON: Timer0 Control Register
- FIGURE 11-1: Timer0 Block Diagram in 8-Bit Mode
- FIGURE 11-2: Timer0 Block Diagram in 16-Bit Mode
- 11.1 Timer0 Operation
- 11.2 Prescaler
  - 11.2.1 Switching Prescaler Assignment
- 11.3 Timer0 Interrupt
- 11.4 16-Bit Mode Timer Reads and Writes
  - TABLE 11-1: Registers Associated with Timer0
12.0 Timer1 Module
- Register 12-1: T1CON: Timer1 Control Register
- 12.1 Timer1 Operation
  - FIGURE 12-1: Timer1 Block Diagram
  - FIGURE 12-2: Timer1 Block Diagram: 16-Bit Read/Write Mode
- 12.2 Timer1 Oscillator
  - FIGURE 12-3: External Components for the Timer1 LP Oscillator
  - TABLE 12-1: Capacitor Selection for the Timer Oscillator
- 12.3 Timer1 Oscillator Layout Considerations
  - FIGURE 12-4: Oscillator Circuit with Grounded Guard Ring
- 12.4 Timer1 Interrupt
- 12.5 Resetting Timer1 Using a CCP Trigger Output
- 12.6 Timer1 16-Bit Read/Write Mode
- 12.7 Using Timer1 as a Real-Time Clock
  - EXAMPLE 12-1: Implementing a Real-Time Clock Using a Timer1 Interrupt Service
  - TABLE 12-2: Registers Associated with Timer1 as a Timer/Counter
13.0 Timer2 Module
- 13.1 Timer2 Operation
  - Register 13-1: T2CON: Timer2 Control Register
- 13.2 Timer2 Interrupt
- 13.3 Output of TMR2
  - FIGURE 13-1: Timer2 Block Diagram
  - TABLE 13-1: Registers Associated with Timer2 as a Timer/Counter
14.0 Timer3 Module
- Register 14-1: T3CON: Timer3 Control Register
- 14.1 Timer3 Operation
  - FIGURE 14-1: Timer3 Block Diagram
  - FIGURE 14-2: Timer3 Block Diagram Configured in 16-Bit Read/Write Mode
- 14.2 Timer1 Oscillator
- 14.3 Timer3 Interrupt
- 14.4 Resetting Timer3 Using a CCP Trigger Output
  - TABLE 14-1: Registers Associated with Timer3 as a Timer/Counter
15.0 Enhanced Capture/ Compare/PWM (ECCP) Module
- Register 15-1: CCP1CON Register for Enhanced CCP Operation
- 15.1 ECCP Outputs
  - TABLE 15-1: Pin Assignments for Various ECCP Modes
- 15.2 CCP Module
  - TABLE 15-2: CCP Mode – Timer Resource
- 15.3 Capture Mode
- 15.4 Compare Mode
- 15.5 Enhanced PWM Mode
16.0 Enhanced Addressable Universal Synchronous Asynchronous Receiver Transmitter (EUSART)
- 16.1 Asynchronous Operation in Power Managed Modes
- 16.2 EUSART Baud Rate Generator (BRG)
- 16.3 EUSART Asynchronous Mode
- 16.4 EUSART Synchronous Master Mode
  - 16.4.1 EUSART Synchronous Master Transmission
  - 16.4.2 EUSART Synchronous Master Reception
    - FIGURE 16-12: Synchronous Reception (Master Mode, SREN)
    - TABLE 16-8: Registers Associated with Synchronous Master Reception
- 16.5 EUSART Synchronous Slave Mode
  - 16.5.1 EUSART Synchronous Slave Transmit
    - TABLE 16-9: Registers Associated with Synchronous Slave Transmission
  - 16.5.2 EUSART Synchronous Slave Reception
    - TABLE 16-10: Registers Associated with Synchronous Slave Reception
17.0 10-Bit Analog-to-Digital Converter (A/D) Module
- Register 17-1: ADCON0: A/D Control Register 0
- Register 17-2: ADCON1: A/D Control Register 1
- Register 17-3: ADCON2: A/D Control Register 2
- FIGURE 17-1: A/D Block Diagram
- FIGURE 17-2: Analog Input Model
- 17.1 A/D Acquisition Requirements
- 17.2 A/D Vref+ and Vref- References
- 17.3 Selecting and Configuring Automatic Acquisition Time
- 17.4 Selecting the A/D Conversion Clock
  - TABLE 17-1: Tad vs. Device Operating Frequencies
- 17.5 Operation in Low-Power Modes
- 17.6 Configuring Analog Port Pins
- 17.7 A/D Conversions
  - FIGURE 17-3: A/D Conversion Tad Cycles (Acqt<2:0> = 000, Tacq = 0)
  - FIGURE 17-4: A/D Conversion Tad Cycles (Acqt<2:0> = 010, Tacq = 4 Tad)
- 17.8 Use of the CCP1 Trigger
  - TABLE 17-2: Summary of A/D Registers
18.0 Low-Voltage Detect
- FIGURE 18-1: Typical Low-Voltage Detect Application
- FIGURE 18-2: Low-Voltage Detect (LVD) Block Diagram
- FIGURE 18-3: Low-Voltage Detect (LVD) with External Input Block Diagram
- 18.1 Control Register
  - Register 18-1: LVDCON Register
- 18.2 Operation
- 18.3 Operation During Sleep
- 18.4 Effects of a Reset
19.0 Special Features of the CPU
- 19.1 Configuration Bits
- 19.2 Watchdog Timer (WDT)
  - 19.2.1 Control Register
- 19.3 Two-Speed Start-up
  - 19.3.1 Special Considerations for Using Two-Speed Start-up
    - FIGURE 19-2: Timing Transition for Two-Speed Start-up (INTOSC to HSPLL)
- 19.4 Fail-Safe Clock Monitor
- 19.5 Program Verification and Code Protection
- 19.6 ID Locations
- 19.7 In-Circuit Serial Programming
  - TABLE 19-4: ICSP/ICD Connections
- 19.8 In-Circuit Debugger
  - TABLE 19-5: Debugger Resources
- 19.9 Low-Voltage ICSP Programming
20.0 Instruction Set Summary
- 20.1 ReadModify-Write Operations
- 20.2 Instruction Set
21.0 Development Support
- 21.1 MPLAB Integrated Development Environment Software
- 21.2 MPASM Assembler
- 21.3 MPLAB C18 and MPLAB C30 C Compilers
- 21.4 MPLINK Object Linker/ MPLIB Object Librarian
- 21.5 MPLAB ASM30 Assembler, Linker and Librarian
- 21.6 MPLAB SIM Software Simulator
- 21.7 MPLAB ICE 2000 High-Performance In-Circuit Emulator
- 21.8 MPLAB REAL ICE In-Circuit Emulator System
- 21.9 MPLAB ICD 2 In-Circuit Debugger
- 21.10 MPLAB PM3 Device Programmer
- 21.11 PICSTART Plus Development Programmer
- 21.12 PICkit 2 Development Programmer
- 21.13 Demonstration, Development and Evaluation Boards
22.0 Electrical Characteristics
- Absolute Maximum Ratings(†)
- 22.1 DC Characteristics: Supply Voltage PIC18F1220/1320 (Industrial) PIC18LF1220/1320 (Industrial)
- 22.2 DC Characteristics: Power-Down and Supply Current PIC18F1220/1320 (Industrial) PIC18LF1220/1...
- 22.3 DC Characteristics: PIC18F1220/1320 (Industrial) PIC18LF1220/1320 (Industrial)
- 22.4 AC (Timing) Characteristics
23.0 DC and AC Characteristics Graphs and Tables
- FIGURE 23-1: Typical Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, +25˚C
- FIGURE 23-2: Maximum Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, -40˚C to +85˚C
- FIGURE 23-3: Maximum Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, -40˚C to +125˚C
- FIGURE 23-4: Typical Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, +25˚C
- FIGURE 23-5: Maximum Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, -40˚C to +125˚C
- FIGURE 23-6: Typical Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, +25˚C
- FIGURE 23-7: Maximum Idd vs. Fosc Over Vdd PRI_RUN, EC Mode, -40˚C to +125˚C
- FIGURE 23-8: Typical Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, +25˚C
- FIGURE 23-9: Maximum Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, -40˚C to +85˚C
- FIGURE 23-10: Maximum Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, -40˚C to +125˚C
- FIGURE 23-11: Typical Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, +25˚C
- FIGURE 23-12: Maximum Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, -40˚C to +125˚C
- FIGURE 23-13: Typical Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, +25˚C
- FIGURE 23-14: Maximum Idd vs. Fosc Over Vdd PRI_IDLE, EC Mode, -40˚C to +125˚C
- FIGURE 23-15: Typical Ipd vs. Vdd (+25˚C), 125 kHz to 8 MHz RC_RUN Mode, All Peripherals Disabled
- FIGURE 23-16: Maximum Ipd vs. Vdd (-40˚C to +125˚C), 125 kHz to 8 MHz RC_RUN Mode, All Peripheral...
- FIGURE 23-17: Typical and Maximum Ipd vs. Vdd (-40˚C to +125˚C), 31.25 kHz RC_RUN Mode, All Perip...
- FIGURE 23-18: Typical Ipd vs. Vdd (+25˚C), 125 kHz to 8 MHz RC_IDLE Mode, All Peripherals Disabled
- FIGURE 23-19: Maximum Ipd vs. Vdd (-40˚C to +125˚C), 125 kHz to 8 MHz RC_IDLE Mode, All Periphera...
- FIGURE 23-20: Typical and Maximum Ipd vs. Vdd (-40˚C to +125˚C), 31.25 kHz RC_IDLE Mode, All Peri...
- FIGURE 23-21: Ipd SEC_RUN Mode, -10˚C to +70˚C, 32.768 kHz XTAL, 2 x 22 pF, All Peripherals Disabled
- FIGURE 23-22: Ipd SEC_IDLE Mode, -10˚C to +70˚C, 32.768 kHz, 2 x 22 pF, All Peripherals Disabled
- FIGURE 23-23: Total Ipd, -40˚C to +125˚C Sleep Mode, All Peripherals Disabled
- FIGURE 23-24: Voh vs. Ioh Over Temperature (-40˚C to +125˚C), Vdd = 3.0V
- FIGURE 23-25: Voh vs. Ioh Over Temperature (-40˚C to +125˚C), Vdd = 5.0V
- FIGURE 23-26: Vol vs. Iol Over Temperature (-40˚C to +125˚C), Vdd = 3.0V
- FIGURE 23-27: Vol vs. Iol Over Temperature (-40˚C to +125˚C), Vdd = 5.0V
- FIGURE 23-28: DIpd Timer1 Oscillator, -10˚C to +70˚C Sleep Mode, TMR1 Counter Disabled
- FIGURE 23-29: DIpd FSCM vs. Vdd Over Temperature PRI_IDLE Mode, EC Oscillator at 32 kHz, -40˚C to...
- FIGURE 23-30: DIpd WDT, -40˚C to +125˚C Sleep Mode, All Peripherals Disabled
- FIGURE 23-31: DIpd LVD vs. Vdd Sleep Mode, LVDL3:LVDL0 = 0001 (2V)
- FIGURE 23-32: DIpd BOR vs. Vdd, -40˚C to +125˚C Sleep Mode, BORV1:BORV0 = 11 (2V)
- FIGURE 23-33: DIpd A/D, -40˚C to +125˚C Sleep Mode, A/D Enabled (Not Converting)
- FIGURE 23-34: Average Fosc vs. Vdd for Various R’s External RC Mode, C = 20 pF, Temperature = +25˚C
- FIGURE 23-35: Average Fosc vs. Vdd for Various R’s External RC Mode, C = 100 pF, Temperature = +25˚C
- FIGURE 23-36: Average Fosc vs. Vdd for Various R’s External RC Mode, C = 300 pF, Temperature = +25˚C
24.0 Packaging Information
- 24.1 Package Marking Information
- 24.2 Package Details
Appendix A: Revision History
- Revision A (August 2002)
- Revision B (November 2002)
- Revision C (May 2004)
- Revision D (October 2006)
- Revision E (January 2007)
- Revision F (February 2007)
Appendix B: Device Differences
- TABLE B-1: Device Differences
Appendix C: Conversion Considerations
Appendix D: Migration from Baseline to Enhanced Devices
Appendix E: Migration from Mid-Range to Enhanced Devices
Appendix F: Migration from High-End to Enhanced Devices
INDEX
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PIC18F1220/1320

6.4 Erasing Flash Program Memory

The minimum erase block size is 32 words or 64 bytes

under firmware control. Only through the use of an

external programmer, or through ICSP control, can

larger blocks of program memory be bulk erased. Word

erase in Flash memory is not supported.

When initiating an erase sequence from the micro-

controller itself, a block of 64 bytes of program memory

is erased. The Most Significant 16 bits of the

TBLPTR<21:6> point to the block being erased.

TBLPTR<5:0> are ignored.

The EECON1 register commands the erase operation.

The EEPGD bit must be set to point to the Flash

program memory. The CFGS bit must be clear to

access program Flash and data EEPROM memory.

The WREN bit must be set to enable write operations.

The FREE bit is set to select an erase operation. The

WR bit is set as part of the required instruction

sequence (as shown in Example 6-2) and starts the

actual erase operation. It is not necessary to load the

TABLAT register with any data as it is ignored.

For protection, the write initiate sequence using

EECON2 must be used.

A long write is necessary for erasing the internal Flash.

Instruction execution is halted while in a long write

cycle. The long write will be terminated by the internal

programming timer.

6.4.1 FLASH PROGRAM MEMORY

ERASE SEQUENCE

The sequence of events for erasing a block of internal

program memory location is:

1. Load Table Pointer with address of row being

erased.

2. Set the EECON1 register for the erase operation:

• set EEPGD bit to point to program memory;

• clear the CFGS bit to access program

memory;

• set WREN bit to enable writes;

• set FREE bit to enable the erase.

3. Disable interrupts.

4. Write 55h to EECON2.

5. Write AAh to EECON2.

6. Set the WR bit. This will begin the row erase

cycle.

7. The CPU will stall for duration of the erase

(about 2 ms using internal timer).

8. Execute a NOP.

9. Re-enable interrupts.

EXAMPLE 6-2: ERASING A FLASH PROGRAM MEMORY ROW

MOVLW CODE_ADDR_UPPER ; load TBLPTR with the base

MOVWF TBLPTRU ; address of the memory block

MOVLW CODE_ADDR_HIGH

MOVWF TBLPTRH

MOVLW CODE_ADDR_LOW

MOVWF TBLPTRL

ERASE_ROW

BSF EECON1, EEPGD ; point to FLASH program memory

BSF EECON1, WREN ; enable write to memory

BSF EECON1, FREE ; enable Row Erase operation

BCF INTCON, GIE ; disable interrupts

MOVLW 55h

MOVWF EECON2 ; write 55H

Required MOVLW AAh

Sequence MOVWF EECON2 ; write AAH

BSF EECON1, WR ; start erase (CPU stall)

NOP

BSF INTCON, GIE ; re-enable interrupts