Datasheet

 2010-2013 Microchip Technology Inc. DS40001430E-page 191
PIC16(L)F720/721
D133 TPEW Erase/Write cycle time — 2.8 ms Temperature during programming:
10°C  T
A  40°C
D134* T
RETD Characteristic Retention — 40 — Year Provided no other specifications
are violated
D135 E
HEFC High-Endurance Flash Cell 100K — — E/W 0°C to +60°C
Lower byte,
Last 128 Addresses in Flash
memory
23.4 DC Characteristics: PIC16(L)F720/721-I/E (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param.
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
* These parameters are characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Negative current is defined as current sourced by the pin.
2: The leakage current on the MCLR
pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.