Information

 2003 Microchip Technology Inc. DS80158B-page 3
PIC16HV540
2. Module: DC Characteristics
Table 10.1, Regulation Voltage, Max. changes
from 6 to 6.5, as shown in bold below.
TABLE 10-1: DC CHARACTERISTICS: PIC16HV540-04, 20 (COMMERCIAL)
PIC16HV540-04I, 20I (INDUSTRIAL)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 0
°C ≤ TA ≤ +70°C (commercial)
-40
°C ≤ TA ≤ +85°C (industrial)
Characteristic Sym. Min. Typ
(1)
Max. Units Conditions
Supply Voltage V
DD 3.5
4.5 —
15
15
V
V
LP, XT and RC modes
HS mode
RAM Data Retention Voltage
(2)
VDR — 1.5* — V Device in SLEEP mode
V
DD start voltage to ensure
Power-on Reset
VPOR —VSS — V See section on Power-on Reset for details
V
DD rise rate to ensure
Power-on Reset
SVDD 0.05
V
DD
V/ms See Section 7.4 for details on
Power-on Reset
Supply Current
(3)
HS option
XT and RC
(4)
options
LP option
I
DD
—
—
—
5
1.8
300
20
3.3
500
mA
mA
µA
FOSC = 20 MHz, VDD = 15V, VREG = 5V
F
OSC = 4 MHz, VDD = 15V, VREG = 5V
F
OSC = 32 kHz, VDD = 15V, VREG = 5V,
WDT disabled
Power-down Current
(5)(6)
IPD
—
—
—
—
4.5
0.25
1.8
1.4
20
14
10
5
µA
µA
µA
µA
VDD = 15V, VREG = 5V SLEEP timer enable,
BOD disabled
V
DD = 15V, VREG = 3V SLEEP timer enable,
BOD disabled
V
DD = 15V, VREG = 5V SLEEP timer disabled,
BOD disabled
V
DD = 15V, VREG = 3V SLEEP timer disabled,
BOD disabled
Brown-out Current — 0.5 — µA V
DD = 15V, VREG = 5V, BOD enabled
Brown-out Detector Threshold B
VDD 2.7
1.8
3.1
2.2
4.2
2.8
V
V
VDD = 15V, VREG = 5V* (7)
V
DD = 15V, VREG = 3V* (7)
Regulation Voltage V
IO 2
4
3
5
4.5
6.5
V
V
VDD = 15V, VREG = 3V, Unloaded outputs,
SLEEP
V
DD = 15V, VREG = 5V, Unloaded outputs,
SLEEP
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only
and is not tested.
2: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, oscil-
lator type, bus rate, internal code execution pattern, and temperature also have an impact on the current consumption.
a) The test conditions for all I
DD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
V
SS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through R
EXT. The current through the resistor can be estimated by the
formula: I
R = VDD/2REXT (mA) with REXT in kΩ.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD and VSS.
6: The oscillator start-up time can be as much as 8 seconds for XT and LP oscillator selection, if the SLEEP mode is exited
or during initial power-up.
7: See Section 7.6.1 for additional information.