Datasheet

PIC16F913/914/916/917/946
DS41250F-page 262 © 2007 Microchip Technology Inc.
Capacitive Loading Specs on
Output Pins
D101* COSC2 OSC2 pin — — 15 pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A* C
IO All I/O pins — — 50 pF
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M — E/W -40°C ≤ TA ≤ +85°C
D120A E
D Byte Endurance 10K 100K — E/W +85°C ≤ TA ≤ +125°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON1 to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 5 6 ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(4)
1M 10M — E/W -40°C ≤ TA ≤ +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C ≤ TA ≤ +85°C
D130A E
D Cell Endurance 1K 10K — E/W +85°C ≤ TA ≤ +125°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
PEW VDD for Erase/Write 4.5 — 5.5 V
D133 T
PEW Erase/Write cycle time — — 3 ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
19.5 DC Characteristics: PIC16F913/914/916/917/946-I (Industrial)
PIC16F913/914/916/917/946-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR
pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
4: See Section 13.0 “Data EEPROM and Flash Program Memory Control” for additional information.
5: Including OSC2 in CLKOUT mode.