Datasheet

PIC16F882/883/884/886/887
DS41291G-page 256  2006-2012 Microchip Technology Inc.
D100 IULP Ultra Low-Power Wake-Up
Current
— 200 — nA See Application Note AN879,
“Using the Microchip Ultra
Low-Power Wake-up Module”
(DS00879)
Capacitive Loading Specs
on Output Pins
D101* COSC2 OSC2 pin — — 15 pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A
*
C
IO All I/O pins — — 50 pF
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M — E/W -40°C  TA +85°C
D120A ED Byte Endurance 10K 100K — E/W +85°C  TA +125°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON1 to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 5 6 ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(4)
1M 10M — E/W -40°C  TA +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C  TA +85°C
D130A E
D Cell Endurance 1K 10K — E/W +85°C  TA +125°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
PEW VDD for Row Erase/Write VMIN —5.5V
V
DD for Bulk Erase Opera-
tions
4.5 — 5.5 V
D133 T
PEW Erase/Write cycle time — 2 2.5 ms
D134 TRETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
17.5 DC Characteristics: PIC16F882/883/884/886/887-I (Industrial)
PIC16F882/883/884/886/887-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an
external clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR
pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
4: See Section 10.3.1 “Using the Data EEPROM” for additional information.
5: Including OSC2 in CLKOUT mode.