Datasheet

PIC16F882/883/884/886/887
DS41291G-page 254  2006-2012 Microchip Technology Inc.
17.4 DC Characteristics: PIC16F882/883/884/886/887-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +125°C for extended
Param
No.
Device Characteristics Min. Typ† Max. Units
Conditions
VDD Note
D020E Power-down Base
Current (IPD)
(2)
—0.05
9
A 2.0 WDT, BOR, Comparators, VREF and
T1OSC disabled
—0.15 11 A3.0
—0.35 15 A5.0
D021E — 1 28 A 2.0 WDT Current
(1)
—230A3.0
—335A5.0
D022E — 42 65 A 3.0 BOR Current
(1)
—85127A5.0
D023E — 32 45 A 2.0 Comparator Current
(1)
, both
comparators enabled
—6078A3.0
—120160A5.0
D024E — 30 70 A2.0CV
REF Current
(1)
(high range)
—4590A3.0
—75120A5.0
D025E* — 39 91 A2.0CV
REF Current
(1)
(low range)
—59117A3.0
—98156A5.0
D026E — 3.5 18 A 2.0 T1OSC Current
(1)
, 32.768 kHz
—4.021 A3.0
—5.024 A5.0
D027E — 0.30 12 A 3.0 A/D Current
(1)
, no conversion in
progress
—0.36 16 A5.0
D028E — 90 130 A 3.0 VP6 Reference Current
—125170A5.0
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral  current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.