Datasheet
2006-2012 Microchip Technology Inc. DS41291G-page 253
PIC16F882/883/884/886/887
17.3 DC Characteristics: PIC16F882/883/884/886/887-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +85°C for industrial
Param
No.
Device Characteristics Min. Typ† Max. Units
Conditions
V
DD Note
D020 Power-down Base
Current(IPD)
(2)
— 0.05 1.2 A 2.0 WDT, BOR, Comparators, V
REF and
T1OSC disabled
— 0.15 1.5 A3.0
— 0.35 1.8 A5.0
— 150 500 nA 3.0 -40°C T
A +25°C
D021 — 1.0 2.2 A 2.0 WDT Current
(1)
—2.04.0A3.0
—3.07.0A5.0
D022 — 42 60 A 3.0 BOR Current
(1)
— 85 122 A5.0
D023 — 32 45 A 2.0 Comparator Current
(1)
, both
comparators enabled
—6078A3.0
— 120 160 A5.0
D024 — 30 36 A2.0CV
REF Current
(1)
(high range)
—4555A3.0
—7595A5.0
D025* — 39 47 A2.0CV
REF Current
(1)
(low range)
—5972A3.0
— 98 124 A5.0
D026 — 2.0 5.0 A 2.0 T1OSC Current
(1)
, 32.768 kHz
—2.55.5A3.0
—3.07.0A5.0
D027 — 0.30 1.6 A 3.0 A/D Current
(1)
, no conversion in
progress
— 0.36 1.9 A5.0
D028 — 90 125 A 3.0 VP6 Reference Current
— 125 162 A5.0
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.