Datasheet

PIC16F870/871
DS30569C-page 120  2000-2013 Microchip Technology Inc.
IDD Supply Current
(2,5)
D010
D010A
PIC16LF870/871 —
—
0.6
20
2.0
35
mA
A
XT, RC osc configuration
F
OSC = 4 MHz, VDD = 3.0V (Note 4)
LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D010
D013
PIC16F870/871 —
—
—
1.6
7
7
4
15
15
mA
mA
mA
XT, RC osc configuration
F
OSC = 4 MHz, VDD = 5.5V (Note 4)
HS osc configuration
F
OSC = 20 MHz, VDD = 5.5V, -40C to +85C
HS osc configuration
FOSC = 10 MHz, VDD = 5.5V, -40C to +125C
D015* IBOR Brown-out Reset
Current
(6)
—85200A BOR enabled, VDD = 5.0V
IPD Power-down Current
(3,5)
D020
D021
D021A
PIC16LF870/871 —
—
—
7.5
0.8
0.9
30
4.5
5
A
A
A
VDD = 3.0V, WDT enabled, -40C to +85C
V
DD = 3.0V, WDT disabled, 0C to +70C
V
DD = 3.0V, WDT disabled, -40C to +85C
D020
D20A
D021
D021A
D21B
PIC16F870/871 —
—
—
—
—
10.5
10.5
1.5
1.5
1.5
42
60
16
19
30
A
A
A
A
A
VDD = 4.0V, WDT enabled, -40C to +85C
V
DD = 4.0V, WDT enabled, -40C to +125C
V
DD = 4.0V, WDT disabled, -0C to +70C
V
DD = 4.0V, WDT disabled, -40C to +85C
V
DD = 4.0V, WDT disabled, -40C to +125C
D023* I
BOR Brown-out Reset
Current
(6)
—85200A BOR enabled, VDD = 5.0V
14.1 DC Characteristics: PIC16F870/871 (Industrial, Extended)
PIC16LF870/871 (Commercial, Industrial) (Continued)
PIC16LF870/871
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
0°C  T
A  +70°C for Commercial
PIC16F870/871
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
-40°C  T
A  +125°C for Extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
* These parameters are characterized but not tested.
† Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: This is the limit to which V
DD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature also have
an impact on the current consumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD
MCLR
= VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD and VSS.
4: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be
estimated by the formula Ir = V
DD/2REXT (mA) with REXT in k.
5: Timer1 oscillator (when enabled) adds approximately 20 A to the specification. This value is from
characterization and is for design guidance only. This is not tested.
6: The  current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD or IPD measurement.
7: When BOR is enabled, the device will operate correctly until the V
BOR voltage trip point is reached.