Datasheet
1996 Microchip Technology Inc. DS30430B-page 71
PIC16F8X
Applicable Devices
F83
CR83 F84 CR84
11.0 ELECTRICAL CHARACTERISTICS FOR PIC16F83 AND PIC16F84
Absolute Maximum Ratings †
Ambient temperature under bias.............................................................................................................-55
°
C to +125
°
C
Storage temperature .............................................................................................................................. -65
°
C to +150
°
C
Voltage on V
DD
with respect to V
SS
.......................................................................................................... -0.3 to +7.5V
Voltage on MCLR
with respect to V
SS
(2)
...................................................................................................... -0.3 to +14V
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR
) ...................................................-0.6V to (V
DD
+ 0.6V)
Total power dissipation
(1)
.....................................................................................................................................800 mW
Maximum current out of V
SS
pin ...........................................................................................................................150 mA
Maximum current into V
DD
pin ..............................................................................................................................100 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................±
20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by
PORTA..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
)
Note 2:
Voltage spikes below V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
Ω
should be used when applying a “low” level to the MCLR
pin rather than
pulling this pin directly to V
SS
.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
This document was created with FrameMaker404