Datasheet
PIC16F785/HV785
DS41249E-page 144 © 2008 Microchip Technology Inc.
19.2 DC Characteristics: PIC16F785/HV785-I (Industrial)
(1), (2)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Device Characteristics Min Typ† Max Units
Conditions
V
DD
D010 Supply Current (IDD) —1123 μA2.0FOSC = 32 kHz
LP Oscillator mode
—1838 μA3.0
—3575 μA5.0
D011 — 140 240 μA2.0F
OSC = 1 MHz
XT Oscillator mode
— 220 380 μA3.0
— 380 550 μA5.0
D012 — 260 360 μA2.0F
OSC = 4 MHz
XT Oscillator mode
— 420 650 μA3.0
— 0.8 1.1 mA 5.0
D013 — 130 220 μA2.0F
OSC = 1 MHz
EC Oscillator mode
— 215 360 μA3.0
— 360 520 μA5.0
D014 — 220 340 μA2.0F
OSC = 4 MHz
EC Oscillator mode
— 375 550 μA3.0
—0.65 1 mA 5.0
D015 — 8 20 μA2.0F
OSC = 31 kHz
INTRC mode
—1640 μA3.0
—3165 μA5.0
D016 — 340 450 μA2.0F
OSC = 4 MHz
INTOSC mode
— 500 700 μA3.0
— 800 1200 μA5.0
D017 — 230 400 μA2.0F
OSC = 4 MHz
EXTRC mode
— 400 680 μA3.0
— 0.63 1.1 mA 5.0
D018 — 2.6 3.25 mA 4.5 F
OSC = 20 MHz
HS Oscillator mode
— 2.8 3.35 mA 5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: The test conditions for all I
DD measurements in Active Operation mode are: OSC1 = external square wave, from rail-to-
rail; all I/O pins tri-stated, pulled to V
DD; MCLR = VDD; WDT disabled.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading
and switching rate, oscillator type, internal code execution pattern and temperature also have an impact on the current
consumption.
3: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this peripheral is
enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD current from this limit. Max
values should be used when calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with
the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD. When A/D is off, it will not consume
any current other than leakage current. the power-down current spec includes any such leakage from the A/D module.