Datasheet

 2004 Microchip Technology Inc. DS30498C-page 209
PIC16F7X7
18.1 DC Characteristics: PIC16F737/747/767/777 (Industrial, Extended)
PIC16LF737/747/767/777 (Industrial)
PIC16LF737/747/767/777
(Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
PIC16F737/747/767/777
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
-40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
V
DD Supply Voltage
D001 PIC16LF7X7 2.5
2.2
2.0
—
—
—
5.5
5.5
5.5
V
V
V
A/D in use, -40°C to +85°C
A/D in use, 0°C to +85°C
A/D not used, -40°C to +85°C
D001
D001A
PIC16F7X7 4.0
V
BOR*
—
—
5.5
5.5
V
V
All configurations
BOR enabled (Note 6)
D002* V
DR RAM Data Retention
Voltage (Note 1)
—1.5—V
D003 V
POR VDD Start Voltage to
ensure internal Power-on Reset
signal
—VSS — V See section on Power-on Reset for details
D004* SV
DD VDD Rise Rate to ensure
internal Power-on Reset signal
0.05 — — V/ms See section on Power-on Reset for details
V
BOR Brown-out Reset Voltage
PIC16LF7X7
D005 BORV1:BORV0 = 11 1.96 2.06 2.16 V 85°C ≥ T ≥ 25°C
BORV1:BORV0 = 10 2.64 2.78 2.92 V
BORV1:BORV0 = 01 4.11 4.33 4.55 V
BORV1:BORV0 = 00 4.41 4.64 4.87 V
D005 PIC16F7X7 Industrial
BORV1:BORV0 = 1x N.A. — N.A. V Not in operating voltage range of device
BORV1:BORV0 = 01 4.16 — 4.5 V
BORV1:BORV0 = 00 4.45 — 4.83 V
D005 PIC16F7X7 Extended
BORV1:BORV0 = 1x N.A. — N.A. V Not in operating voltage range of device
BORV1:BORV0 = 01 4.07 — 4.59 V
BORV1:BORV0 = 00 4.36 — 4.92 V
Legend: Shading of rows is to assist in readability of of the table.
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not
tested.
Note 1: This is the limit to which V
DD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current
consumption.
The test conditions for all I
DD measurements in active operation mode are:
OSC1 = external square wave, from-rail to-rail; all I/O pins tri-stated, pulled to V
DD
MCLR
= VDD; WDT enabled/disabled as specified.
3: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the
part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD and VSS.
4: For RC oscillator configuration, current through R
EXT is not included. The current through the resistor can be estimated
by the formula Ir = V
DD/2REXT (mA) with REXT in kΩ.
5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD or IPD measurement.
6: When BOR is enabled, the device will operate correctly until the V
BOR voltage trip point is reached.