Datasheet
PIC16(L)F707
DS41418B-page 210 2010-2011 Microchip Technology Inc.
D028D — 125 — — A 1.8 Cap Sense HighRange
Medium Power (Note 6)
—130— — A3.0
D028D — 145 — — A 1.8 Cap Sense High Range
Medium Power (Note 6)
— 150 — — A 3.0
— 160 — — A 5.0
D028E — 150 — — A 1.8 Cap Sense HighRange
High Power (Note 6)
—170— — A3.0
D028E — 180 — — A 1.8 Cap Sense High Range
High Power (Note 6)
— 190 — — A 3.0
— 200 — — A 5.0
25.3 DC Characteristics: PIC16(L)F707-I/E (Power-Down) (Continued)
PIC16LF707
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C T
A +125°C for extended
PIC16F707
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +85°C for industrial
-40°C T
A +125°C for extended
Param
No.
Device Characteristics Min. Typ†
Max.
+85°C
Max.
+125°C
Units
Conditions
V
DD Note
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this peripheral is
enabled. The peripheral current can be determined by subtracting the base I
DD or IPD current from this limit. Max
values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with
the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.
3: Fixed Voltage Reference is automatically enabled whenever the BOR is enabled.
4: A/D oscillator source is F
RC.
5: 0.1 F capacitor on V
CAP (RA0).
6: Includes FVR IPD and DAC IPD.