Datasheet

PIC16F630/676
DS40039E-page 90 © 2007 Microchip Technology Inc.
12.5 DC Characteristics: PIC16F630/676-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +125°C for extended
Param
No.
Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
D020E Power-down Base Current
(IPD)
— 0.00099 3.5 μA 2.0 WDT, BOD, Comparators, V
REF,
and T1OSC disabled
— 0.0012 4.0 μA3.0
— 0.0029 8.0 μA5.0
D021E — 0.3 6.0 μA 2.0 WDT Current
(1)
—1.89.0μA3.0
—8.420μA5.0
D022E — 58 70 μA 3.0 BOD Current
(1)
—109130μA5.0
D023E — 3.3 10 μA 2.0 Comparator Current
(1)
—6.113μA3.0
—11.524μA5.0
D024E — 58 70 μA2.0CVREF Current
(1)
—85100μA3.0
—138165μA5.0
D025E — 4.0 10 μA2.0T1 OSC Current
(1)
—4.612μA3.0
—6.020μA5.0
D026E — 0.0012 6.0 μA 3.0 A/D Current
(1)
— 0.0022 8.5 μA5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD.