Datasheet

PIC16F630/676
DS40039E-page 88 © 2007 Microchip Technology Inc.
12.3 DC Characteristics: PIC16F630/676-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
D020 Power-down Base Current
(IPD)
— 0.99 700 nA 2.0 WDT, BOD, Comparators, V
REF,
and T1OSC disabled
— 1.2 770 nA 3.0
— 2.9 995 nA 5.0
D021 — 0.3 1.5 μA 2.0 WDT Current
(1)
—1.83.5μA3.0
—8.417μA5.0
D022 — 58 70 μA 3.0 BOD Current
(1)
—109130μA5.0
D023 — 3.3 6.5 μA 2.0 Comparator Current
(1)
—6.18.5μA3.0
—11.516 μA5.0
D024 — 58 70 μA2.0CVREF Current
(1)
—85100μA3.0
—138160μA5.0
D025 — 4.0 6.5 μA 2.0 T1 OSC Current
(1)
—4.67.0μA3.0
— 6.0 10.5 μA5.0
D026 — 1.2 755 nA 3.0 A/D Current
(1)
— 0.0022 1.0 μA5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD.