Datasheet
© 2007 Microchip Technology Inc. DS41232D-page 187
PIC12F635/PIC16F636/639
15.11 AC Characteristics: Analog Front-End for PIC16F639 (Industrial)
AC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Supply Voltage 2.0V ≤ V
DD ≤ 3.6V
Operating temperature -40°C ≤ T
AMB ≤ +85°C for industrial
LC Signal Input Sinusoidal 300 mV
PP
Carrier Frequency 125 kHz
LCCOM connected to V
SS
Param
No.
Sym. Characteristic Min Typ† Max Units Conditions
AF01 V
SENSE LC Input Sensitivity
13.0 6mV
PP
VDD = 3.0V
Output enable filter disabled
AGCSIG = 0; MODMIN = 00
(33% modulation depth setting)
Input = Continuous Wave (CW)
Output = Logic level transition from low-to-
high at sensitivity level for CW input.
AF02 V
DE_Q Coil de-Q’ing Voltage -
RF Limiter (R
FLM) must be active
3— 5 VV
DD = 3.0V, Force IIN = 5 μA
AF03 R
FLM RF Limiter Turn-on Resistance
(LCX, LCY, LCZ)
— 300 700 Ohm VDD = 2.0V, VIN = 8 VDC
AF04 S
ADJ Sensitivity Reduction
—
—
0
-30
—
—
dB
dB
VDD = 3.0V
No sensitivity reduction selected
Max reduction selected
Monotonic increment in attenuation value from
setting = 0000 to 1111 by design
AF05 V
IN_MOD Minimum Modulation Depth
75% ± 12%
50% ± 12%
25% ± 12%
12% ± 12%
63
38
13
0
75
50
25
12
87
62
37
24
%
%
%
%
VDD = 3.0V
AF06 C
TUNX LCX Tuning Capacitor
—
44
0
63
—
82
pF
pF
VDD = 3.0V,
Config. Reg. 1, bits <6:1> Setting = 000000
63 pF +/- 30%
Config. Reg. 1, bits <6:1> Setting = 111111
63 steps, 1 pF/step
Monotonic increment in capacitor value from
setting = 000000 to 111111 by design
AF07 C
TUNY LCY Tuning Capacitor
—
44
0
63
—
82
pF
pF
VDD = 3.0V,
Config. Reg. 2, bits <6:1> Setting = 000000
63 pF +/- 30%
Config. Reg. 2, bits <6:1> Setting = 111111
63 steps, 1 pF/step
Monotonic increment in capacitor value from
setting = 000000 to 111111 by design
AF08 C
TUNZ LCZ Tuning Capacitor
—
44
0
63
—
82
pF
pF
V
DD = 3.0V,
Config. Reg. 3, bits<6:1> Setting = 000000
63 pF +/- 30%
Config. Reg. 3, bits<6:1> Setting = 111111
63 steps, 1 pF/step
Monotonic increment in capacitor value from
setting = 000000 to 111111 by design
AF09 F
CARRIER Carrier frequency — 125 — kHz Characterized at bench.
AF10 F
MOD Input modulation frequency — — 10 kHz Input data rate, characterized at bench.
AF11 C_Q Q of Trimming Capacitors 50* — — pF Characterized at bench test
AF12 T
DR Demodulator Charge Time
(delay time of demodulated output
to rise)
—50 — μsV
DD = 3.0V
MOD depth setting = 50%
Input conditions:
Amplitude = 300 mV
PP
Modulation depth = 80%
AF13 T
DF Demodulator Discharge Time
(delay time of demodulated output
to fall)
—50 — μsVDD = 3.0V
MOD depth setting = 50%
Input conditions:
Amplitude = 300 mV
PP
Modulation depth = 80%
* Parameter is characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1: Required output enable filter high time must account for input path analog delays (= T
OEH - TDR + TDF).
2: Required output enable filter low time must account for input path analog delays (= T
OEL + TDR - TDF).