Datasheet
PIC12F635/PIC16F636/639
DS41232D-page 174 © 2007 Microchip Technology Inc.
15.6 DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Supply Voltage 2.0V ≤ V
DD ≤ 3.6V
Param
No.
Sym Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
D010 I
DD Supply Current
(1,2,3)
—1116μA2.0FOSC = 32.768 kHz
LP Oscillator mode
—1828μA3.0
D011 — 140 240 μA2.0F
OSC = 1 MHz
XT Oscillator mode
— 220 380 μA3.0
D012 — 260 360 μA2.0F
OSC = 4 MHz
XT Oscillator mode
— 420 650 μA3.0
D013 — 130 220 μA2.0F
OSC = 1 MHz
EC Oscillator mode
— 215 360 μA3.0
D014 — 220 340 μA2.0F
OSC = 4 MHz
EC Oscillator mode
— 375 550 μA3.0
D015 — 8 20 μA2.0F
OSC = 31 kHz
LFINTOSC mode
—1640μA3.0
D016 — 340 450 μA2.0F
OSC = 4 MHz
HFINTOSC mode
— 500 700 μA3.0
D017 — 230 400 μA2.0F
OSC = 4 MHz
EXTRC mode
— 400 680 μA3.0
D020 I
PD Power-down Base Current
(4)
— 0.15 1.2 μA 2.0 WDT, BOR, Comparators,
V
REF and T1OSC disabled
(excludes AFE)
— 0.20 1.5 μA3.0
D021 IWDT — 1.2 2.2 μA2.0WDT Current
(1)
—2.04.0μA3.0
D022A IBOR — 42 60 μA 3.0 BOR Current
(1)
D022B ILVD — 22 28 μA 2.0 PLVD Current
—2535μA3.0
D023 ICMP — 32 45 μA 2.0 Comparator Current
(1)
—6078μA3.0
D024A IV
REFHS —3036μA2.0CVREF Current
(1)
(high-range)
—4555μA3.0
D024B IV
REFLS —3947μA2.0CVREF Current
(1)
(low-range)
—5972μA3.0
D025 IT1OSC — 4.5 7.0 μA 2.0 T1OSC Current
(1)
—5.08.0μA3.0
D026 I
ACT Active Current of AFE only
(receiving signal)
1 LC Input Channel Signal
3 LC Input Channel Signals
—
—
10
13
—
18
μA
μA
3.6
3.6
CS = VDD; Input = Continuous
Wave (CW);
Amplitude = 300 mV
PP.
All channels enabled.
D027 I
STDBY Standby Current of AFE only
(not receiving signal)
1 LC Input Channel Enabled
2 LC Input Channels Enabled
3 LC Input Channels Enabled
—
—
—
3
4
5
5
6
7
μΑ
μA
μA
3.6
3.6
3.6
CS
= VDD; ALERT = VDD
D028 ISLEEP Sleep Current of AFE only — 0.2 1 μA3.6CS = VDD; ALERT = VDD
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1: The test conditions for all I
DD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins
tri-stated, pulled to V
DD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,
oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog
Front-End not included.
3: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this peripheral is enabled. The
peripheral Δ current can be determined by subtracting the base I
DD or IPD current from this limit. Max values should be used when
calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep
mode, with all I/O pins in high-impedance state and tied to V
DD.