Datasheet

© 2007 Microchip Technology Inc. DS41232D-page 173
PIC12F635/PIC16F636/639
15.5 DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
D001 V
DD Supply Voltage 2.0 — 3.6 V FOSC ≤ 10 MHz
D001A VDDT Supply Voltage (AFE) 2.0 — 3.6 V Analog Front-End VDD voltage. Treated as
V
DD in this document.
D002 VDR RAM Data Retention
Voltage
(1)
1.5* — — V Device in Sleep mode
D003 V
POR VDD Start Voltage to
ensure internal Power-on
Reset signal
—V
SS —VSee Section 12.3 “Power-on Reset” for
details.
D003A VPORT VDD Start Voltage (AFE)
to ensure internal Power-
on Reset signal
— — 1.8 V Analog Front-End POR voltage.
D004 S
VDD VDD Rise Rate to ensure
internal Power-on Reset
signal
0.05* — — V/ms See Section 12.3 “Power-on Reset” for
details.
D005 V
BOD Brown-out Reset 2.0 2.1 2.2 V
D006 RM Turn-on Resistance or
Modulation Transistor
— 50 100 Ohm VDD = 3.0V
D007 R
PU Digital Input Pull-Up
Resistor
CS
, SCLK
50 200 350 kOhm V
DD = 3.6V
D008 IAIL Analog Input Leakage
Current
LCX, LCY, LCZ
LCCOM
—
—
—
—
±1
±1
μA
μA
V
DD = 3.6V, VSS ≤ VIN ≤ VDD, tested at
Sleep mode
* These parameters are characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.