Datasheet

PIC12F635/PIC16F636/639
DS41232D-page 170 © 2007 Microchip Technology Inc.
D020 IPD Power-down Base
Current
(4)
— 0.15 1.2 μA 2.0 WDT, BOR, Comparators,
V
REF and T1OSC disabled
— 0.20 1.5 μA3.0
— 0.35 1.8 μA5.0
D021 — 1.0 17.5 μA 2.0 WDT Current
(1)
—2.019μA3.0
—3.022μA5.0
D022A — 42 60 μA 3.0 BOR Current
(1)
—85122μA5.0
D022B — 22 48 μA2.0PLVD Current
—2555μA3.0
—3365μA5.0
D023 — 32.3 45 μA 2.0 Comparator Current
(1)
—6078μA3.0
— 120 160 μA5.0
D024A — 30 36 μA2.0CV
REF Current
(1)
(high-range)
—4555μA3.0
—7595μA5.0
D024B — 39 47 μA2.0CV
REF Current
(1)
(low-range)
—5972μA3.0
—98124μA5.0
D025 — 4.5 25 μA 2.0 T1OSC Current
(3)
—5.030μA3.0
—6.040μA5.0
15.3 DC Characteristics: PIC12F635/PIC16F636-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: The test conditions for all I
DD measurements in Active Operation mode are: OSC1 = external square wave, from
rail-to-rail; all I/O pins tri-stated, pulled to V
DD; MCLR = VDD; WDT disabled.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact
on the current consumption.
3: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this periph-
eral is enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD current from this
limit. Max values should be used when calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.