Datasheet

© 2009 Microchip Technology Inc. DS40044G-page 141
PIC16F627A/628A/648A
TABLE 17-1: DC Characteristics: PIC16F627A/628A/648A (Industrial, Extended)
PIC16LF627A/628A/648A (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial and
-40°C ≤ TA ≤ +125°C for extended
Operating voltage V
DD range as described in DC specification
Table 17-2 and Table 17-3
Parameter
No.
Sym Characteristic Min Typ† Max Units Conditions
Data EEPROM Memory
D120
D120A
D121
D122
D123
D124
E
D
ED
VDRW
TDEW
TRETD
TREF
Endurance
Endurance
V
DD for read/write
Erase/Write cycle time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
(1)
100K
10K
V
MIN
—
40
1M
1M
100K
—
4
—
10M
—
5.5
8
*
—
—
E/W
E/W
V
ms
Year
E/W
-40°C ≤ T
A ≤ 85°C
85°C ≤ T
A ≤ 125°C
V
MIN = Minimum operating
voltage
Provided no other
specifications are violated
-40°C to +85°C
Program Flash Memory
D130
D130A
D131
D132
D132A
D133
D133A
D134
E
P
EP
VPR
VIE
VPEW
TIE
TPEW
TRETP
Endurance
Endurance
VDD for read
V
DD for Block erase
V
DD for write
Block Erase cycle time
Write cycle time
Characteristic Retention
10K
1000
V
MIN
4.5
V
MIN
—
—
40
100K
10K
—
—
—
4
2
—
—
—
5.5
5.5
5.5
8
*
4*
—
E/W
E/W
V
V
V
ms
ms
year
-40°C ≤ T
A ≤ 85°C
85°C ≤ T
A ≤ 125°C
V
MIN = Minimum operating
voltage
V
MIN = Minimum operating
voltage
V
DD > 4.5V
Provided no other
specifications are violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 13.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.