Datasheet

PIC16F62X
DS40300C-page 130 Preliminary  2003 Microchip Technology Inc.
17.1 DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)
PIC16F62X-20 (Commercial, Industrial, Extended)
PIC16LF62X-04 (Commercial, Industrial)
PIC16LF62X-04
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ Ta ≤ +85°C for industrial and
0°C ≤ Ta ≤ +70°C for commercial
PIC16F62X-04
PIC16F62X-20
(Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ Ta ≤ +85°C for industrial and
0°C ≤ Ta ≤ +70°C for commercial and
-40°C ≤ Ta ≤ +125°C for extended
Param
No.
Sym Characteristic/Device Min Typ† Max Units Conditions
V
DD Supply Voltage
D001 PIC16LF62X 2.0 — 5.5 V
D001 PIC16F62X 3.0 — 5.5 V
D002 VDR RAM Data Retention
Voltage
(1)
— 1.5 — V Device in SLEEP mode*
D003 V
POR VDD Start Voltage
to ensure Power-on Reset
—VSS — V See section on Power-on Reset
for details
D004 S
VDD VDD Rise Rate
to ensure Power-on Reset
0.05 — — V/ms See section on Power-on Reset
for details*
D005 V
BOD Brown-out Detect Voltage 3.65
3.65
4.0
—
4.35
4.4
V
V
BODEN configuration bit is set
BODEN configuration bit is set,
Extended
D010
D013
I
DD Supply Current
(2), (5)
PIC16LF62X —
—
—
—
—
—
0.30
1.10
4.0
3.80
—
20
0.6
2.0
7.0
6.0
2.0
30
mA
mA
mA
mA
mA
µA
Fosc = 4.0 MHz, V
DD = 2.0
(5)
FOSC = 4.0 MHz, VDD = 5.5*
Fosc = 20.0 MHz, V
DD = 5.5
Fosc = 20.0 MHz, V
DD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0
(6)
FOSC = 32 kHz, VDD = 2.0
D010
D013
D014
PIC16F62X —
—
—
—
—
0.60
1.10
4.0
3.80
—
20
0.7
2.0
7.0
6.0
2.0
30
mA
mA
mA
mA
mA
µA
Fosc = 4.0 MHz, VDD = 3.0
Fosc = 4.0 MHz, V
DD = 5.5*
F
OSC = 20.0 MHz, VDD = 5.5
F
OSC = 20.0 MHz, VDD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0*
(6)
FOSC = 32 kHz, VDD = 3.0*
Legend: Rows with standard voltage device data only are shaded for improved readability.
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD,
MCLR
= VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or VSS.
4: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD or IPD measurement.
5: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be estimated by the
formula Ir = V
DD/2REXT (mA) with REXT in kΩ.
6: Commercial temperature only.