Datasheet
2010 Microchip Technology Inc. DS41326E-page 85
PIC16F526
14.1 DC Characteristics: PIC16F526 (Industrial)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40C T
A +85C (industrial)
Param
No.
Sym. Characteristic Min. Typ.
(1)
Max. Units Conditions
D001 V
DD Supply Voltage 2.0 5.5 V See Figure 14-1
D002 VDR RAM Data Retention Voltage
(2)
— 1.5* — V Device in Sleep mode
D003 V
POR VDD Start Voltage to ensure
Power-on Reset
—Vss— VSee Section 8.4 “Power-on
Reset (POR)” for details
D004 S
VDD VDD Rise Rate to ensure
Power-on Reset
0.05* — — V/ms See Section 8.4 “Power-on
Reset (POR)” for details
D005 I
DDP Supply Current During Prog/
Erase
— 250* — A
D010 I
DD Supply Current
(3, 4, 6)
—
—
175
400
250
700
A
A
FOSC = 4 MHz, VDD = 2.0V
F
OSC = 4 MHz, VDD = 5.0V
—
—
250
0.75
400
1.2
A
mA
FOSC = 8 MHz, VDD = 2.0V
F
OSC = 8 MHz, VDD = 5.0V
—1.42.2mAFOSC = 20 MHz, VDD = 5.0V
—
—
11
38
22
55
A
A
FOSC = 32 kHz, VDD = 2.0V
F
OSC = 32 kHz, VDD = 5.0V
D020 IPD Power-down Current
(5)
—
—
0.1
0.35
1.2
2.2
A
A
VDD = 2.0V
V
DD = 5.0V
D022 I
WDT WDT Current
(5)
—
—
1.0
7.0
3.0
16.0
A
A
VDD = 2.0V
V
DD = 5.0V
D023 ICMP Comparator Current
(5)
—
—
15
60
26
76
A
A
VDD = 2.0V (per comparator)
V
DD = 5.0V (per comparator)
D022 ICVREF CVREF Current
(5)
—
—
30
75
75
135
A
A
VDD = 2.0V (high range)
V
DD = 5.0V (high range)
D023 I
FVR Internal 0.6V Fixed Voltage
Reference Current
(5)
—
—
100
175
120
205
A
A
VDD = 2.0V (reference and 1
comparator enabled)
V
DD = 5.0V (reference and 1
comparator enabled)
D024 I
AD* A/D Conversion Current — 120 150 A2.0V
— 200 250 A5.0V
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25C. This data is for design
guidance only and is not tested.
2: This is the limit to which V
DD can be lowered in Sleep mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
4: The test conditions for all I
DD measurements in Active Operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
SS, T0CKI = VDD, MCLR =
V
DD; WDT enabled/disabled as specified.
5: For standby current measurements, the conditions are the same as I
DD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
6: For EXTRC mode, does not include current through REXT. The current through the resistor can be estimated
by the formula:
I = V
DD/2REXT (mA) with REXT in k.