Datasheet
© 2007 Microchip Technology Inc. DS41268D-page 87
PIC12F510/16F506
13.2 DC Characteristics: PIC12F510/16F506 (Extended)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 40°C ≤ T
A ≤ +125°C (extended)
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
D001 V
DD Supply Voltage 2.0 5.5 V See Figure 14-1
D002 VDR RAM Data Retention Voltage
(2)
— 1.5* — V Device in Sleep mode
D003 V
POR VDD Start Voltage to ensure
Power-on Reset
—Vss— VSee Section 10.4 “Power-on
Reset (POR)” for details
D004 S
VDD VDD Rise Rate to ensure
Power-on Reset
0.05* — — V/ms See Section 10.4 “Power-on
Reset (POR)” for details
D010 I
DD Supply Current
(3,4)
—
—
175
0.625
275
1.1
μA
mA
FOSC = 4 MHz, VDD = 2.0V
F
OSC = 4 MHz, VDD = 5.0V
—
—
250
1.0
450
1.5
μA
mA
F
OSC = 8 MHz, VDD = 2.0V
F
OSC = 8 MHz, VDD = 5.0V
—1.42.0mAFOSC = 20 MHz, VDD = 5.0V
—
—
11
38
16
54
μA
μA
F
OSC = 32 kHz, VDD = 2.0V
F
OSC = 32 kHz, VDD = 5.0V
D020 IPD Power-down Current
(5)
—
—
0.1
0.35
9.0
15.0
μA
μA
VDD = 2.0V
V
DD = 5.0V
D022 IWDT WDT Current
(5)
—
—
1.0
7.0
18
22
μA
μA
VDD = 2.0V
V
DD = 5.0V
D023 ICMP Comparator Current
(5)
—
—
15
55
25
75
μA
μA
VDD = 2.0V (per comparator)
V
DD = 5.0V (per comparator)
D022 ICVREF CVREF Current
(5)
—
—
30
75
65
135
μA
μA
VDD = 2.0V (high range)
V
DD = 5.0V (high range)
D023 IFVR Internal 0.6V Fixed Voltage
Reference Current
(5)
—
—
85
175
130
220
μA
μA
VDD = 2.0V (0.6V reference and
1 comparator enabled)
VDD = 5.0V (0.6V reference and
1 comparator enabled)
D024 ΔI
AD A/D Conversion Current
(5)
— 120 150 μA2.0V
— 200 250 μA5.0V
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
guidance only and is not tested.
2: This is the limit to which V
DD can be lowered in Sleep mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
4: The test conditions for all I
DD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
SS, T0CKI = VDD, MCLR = VDD;
WDT enabled/disabled as specified.
5: For standby current measurements, the conditions are the same as I
DD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
6: Does not include current through REXT. The current through the resistor can be estimated by the formula:
I = V
DD/2REXT (mA) with REXT in kΩ.