Datasheet

PIC16(L)F1825/1829
DS41440C-page 358  2010-2012 Microchip Technology Inc.
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory Programming
Specifications
D110
V
IHH Voltage on MCLR/VPP/RA5 pin 8.0 — 9.0 V (Note 3, 4)
D111 I
DDP Supply Current during Programming — — 10 mA
D112 V
BE VDD for Bulk Erase 2.7 — VDDMAX V
D113 V
PEW VDD for Write or Row Erase VDDMIN —VDDMAX V
D114 I
PPPGM Current on MCLR/VPP during Erase/
Write
—1.0
—
mA
D115 I
DDPGM Current on VDD during Erase/Write —
5.0
—
mA
Data EEPROM Memory
D116 E
D Byte Endurance 100K — — E/W -40C to +85C
D117 V
DRW VDD for Read/Write VDDMIN —VDDMAX V
D118 T
DEW Erase/Write Cycle Time — 4.0 5.0 ms
D119 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D120 T
REF Number of Total Erase/Write Cycles
before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D121 E
P Cell Endurance 10K — — E/W -40C to +85C (Note 1)
D122 V
PRW VDD for Read/Write VDDMIN —VDDMAX V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable V
PP output. Circuitry to limit the MPLAB ICD 2 VPP voltage must be placed
between the MPLAB ICD 2 and target system when programming or debugging with the MPLAB ICD 2.