Datasheet

 2011-2012 Microchip Technology Inc. Preliminary DS41579D-page 379
PIC16(L)F1782/3
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory
Programming Specifications
D110
V
IHH Voltage on MCLR/VPP/RE3 pin 8.0 — 9.0 V (Note 3)
D111 I
DDP Supply Current during
Programming
——10mA
D112
VDD for Bulk Erase 2.7 — VDDMAX V
D113 V
PEW VDD for Write or Row Erase VDDMIN —VDDMAX V
D114
IPPPGM Current on MCLR/VPP during
Erase/Write
——1.0mA
D115
IDDPGM Current on VDD during Erase/Write —
5.0 mA
Data EEPROM Memory
D116 E
D Byte Endurance 100K
—
—E/W-40C to +85C
D117 V
DRW VDD for Read/Write
VDDMIN —VDDMAX
V
D118 T
DEW Erase/Write Cycle Time — 4.0 5.0 ms
D119 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D120 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
100k — — E/W -40°C to +85°C
Program Flash Memory
D121 E
P Cell Endurance 10K
—
—E/W-40C to +85C (Note 1)
D122 V
PR VDD for Read
VDDMIN —VDDMAX
V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Self-write and Block Erase.
2: Refer to Section 12.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.