Datasheet

Table Of Contents
PIC16(L)F1508/9
DS40001609C-page 334 2011-2013 Microchip Technology Inc.
TABLE 29-5: MEMORY PROGRAMMING SPECIFICATIONS
Standard Operating Conditions (unless otherwise stated)
Param.
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory
Programming Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 9.0 V (Note 2)
D111 I
DDP Supply Current during
Programming
——10mA
D112 V
BE VDD for Bulk Erase 2.7 VDDMAX V
D113 V
PEW VDD for Write or Row Erase VDDMIN —VDDMAX V
D114 I
PPPGM Current on MCLR/VPP during
Erase/Write
—1.0—mA
D115 I
DDPGM Current on VDD during
Erase/Write
—5.0—
mA
Program Flash Memory
D121 E
P Cell Endurance 10K E/W -40C TA +85C
(Note 1)
D122 V
PRW VDD for Read/Write VDDMIN —VDDMAX V
D123 TIW Self-timed Write Cycle Time 2 2.5 ms
D124 TRETD Characteristic Retention 40 Year Provided no other
specifications are violated
D125 E
HEFC High-Endurance Flash Cell 100K E/W 0C TA +60°C, lower
byte last 128 addresses
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.