Datasheet

PIC16(L)F1507
DS41586A-page 229 Preliminary  2011 Microchip Technology Inc.
25.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory
Programming Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 — 9.0 V (Note 2, Note 3)
D111 I
DDP Supply Current during
Programming
——10mA
D112
VDD for Bulk Erase 2.7 — VDD max. V
D113 V
PEW VDD for Write or Row Erase VDD min. — VDD max. V
D114
IPPPGM Current on MCLR/VPP during Erase/
Write
——1.0mA
D115
IDDPGM Current on VDD during Erase/Write —
5.0 mA
Program Flash Memory
D121 E
P Cell Endurance 10K
—
—E/W-40C to +85C (Note 1)
D122 V
PR VDD for Read
VDD min. — VDD max.
V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.
3: The MPLAB® ICD 2 does not support variable V
PP output. Circuitry to limit the MPLAB ICD 2 VPP voltage
must be placed between the MPLAB ICD 2 and target system when programming or debugging with the
MPLAB ICD 2.