Information

PIC16(L)F1507
DS80537E-page 8  2012-2013 Microchip Technology Inc.
2. Module: Memory
3.1 Program Memory Organization
TABLE 3-1: DEVICE SIZES AND ADDRESSES
25.5 Memory Programming Requirements
3. Module: Ports
Register 11-16: WPUC: WEAK PULL-UP
PORTC REGISTER should be removed from
the data sheet completely. The PIC16(L)F1507
devices do not incorporate the weak pull-up
feature on PORTC.
Device
Program Memory
Space (Words)
Last Program Memory
Address
High-Endurance Flash
Memory Address Range
(1)
PIC16F1507
PIC16LF1507
2,048 07FFh 0780h-07FFh
Note 1: High-Endurance Flash applies to the low byte of each address in the range.
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory Programming
Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 — 9.0 V (Note 2)
D111 I
DDP Supply Current during
Programming
——10mA
D112 V
BE VDD for Bulk Erase 2.7 — VDDMAX V
D113 V
PEW VDD for Write or Row Erase VDDMIN — VDDMAX V
D114 I
PPPGM Current on MCLR/VPP during
Erase/Write
——1.0mA
D115 I
DDPGM Current on VDD during Erase/
Write
——5.0
mA
Program Flash Memory
D121 E
P Cell Endurance 10K — — E/W -40C to +85C (Note 1)
D122 V
PRW VDD for Read/Write VDDMIN —VDDMAX V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D125 E
HEFC High-Endurance Flash Cell 100K — — E/W 0°C to +60°C lower byte,
last 128 addresses
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.