Datasheet

 2012 Microchip Technology Inc. Preliminary DS41639A-page 363
PIC16(L)F1454/5/9
29.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory
Programming Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 — 9.0 V (Note 2)
D111 I
DDP Supply Current during
Programming
——10mA
D112 VBE V
DD for Bulk Erase 2.7 — VDDMAX V
D113 V
PEW VDD for Write or Row Erase VDDMIN —VDDMAX V
D114 I
PPPGM Current on MCLR/VPP during
Erase/Write
—1.0—mA
D115 I
DDPGM Current on VDD during Erase/
Write
—5.0
—mA
Program Flash Memory
D121 E
P Cell Endurance 10K
—
—E/W-40C to +85C (Note 1)
D122 V
PRW VDD for Read/Write
VDDMIN —VDDMAX
V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D125 E
HEFC High-Endurance Flash Cell 100K — — E/W 0°C to +60°C lower byte,
last 128 addresses
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.