Datasheet

 1998-2013 Microchip Technology Inc. DS40182D-page 87
PIC16CE62X
13.2 DC CHARACTERISTICS: PIC16LCE62X-04 (Commercial, Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature –40C  T
A  +85C for industrial and
0C  T
A  +70C for commercial and
–40C  T
A  +125C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
D001 V
DD Supply Voltage 2.5 – 5.5 V See Figure 13-1 through Figure 13-3
D002 V
DR RAM Data Retention
Voltage (Note 1)
– 1.5* – V Device in SLEEP mode
D003 V
POR VDD start voltage to
ensure Power-on Reset
–VSS – V See section on power-on reset for details
D004 S
VDD VDD rise rate to ensure
Power-on Reset
.05* – – V/ms See section on power-on reset for details
D005 V
BOR Brown-out Detect Voltage 3.7 4.0 4.35 V BOREN configuration bit is cleared
D010 I
DD Supply Current (Note 2) –
–
–
1.2
–
35
2.0
1.1
70
mA
mA
A
FOSC = 4 MHz, VDD = 5.5V, WDT disabled,
XT osc mode,
(Note 4)*
F
OSC = 4 MHz, VDD = 2.5V, WDT disabled,
XT osc mode,
(Note 4)
F
OSC = 32 kHz, VDD = 2.5V, WDT disabled,
LP osc mode
D020 I
PD Power Down Current (Note 3) –
–
–
–
–
–
–
–
2.0
2.2
9.0
15
A
A
A
A
VDD = 2.5V
V
DD = 3.0V*
V
DD = 5.5V
V
DD = 5.5V Extended
D022
D022A
D023
D023A
I
WDT
IBOR
ICOMP
IVREF
WDT Current (Note 5)
Brown-out Reset Current
(Note 5)
Comparator Current for each
Comparator (Note 5)
V
REF Current (Note 5)
–
–
–
–
6.0
75
30
80
10
12
125
60
135
A
A
A
A
A
V
DD=4.0V
(125C)
BO
D enabled, VDD = 5.0V
V
DD = 4.0V
V
DD = 4.0V
I
EE Write
I
EE Read
I
EE
IEE
Operating Current
Operating Current
Standby Current
Standby Current
–
–
–
–
3
1
30
100
mA
mA
A
A
VCC = 5.5V, SCL = 400 kHz
V
CC = 3.0V, EE VDD = VCC
VCC = 3.0V, EE VDD = VCC
1A FOSC LP Oscillator Operating Frequency
RC Oscillator Operating Frequency
XT Oscillator Operating Frequency
HS Oscillator Operating Frequency
0
0
0
0
—
—
—
—
200
4
4
20
kHz
MHz
MHz
MHz
All temperatures
All temperatures
All temperatures
All temperatures
* These parameters are characterized but not tested.
† Data in "Typ" column is at 5.0V, 25C, unless otherwise stated. These parameters are for design guidance only and are not
tested.
Note 1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD,
MCLR
= VDD; WDT enabled/disabled as specified.
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the for-
mula Ir = V
DD/2Rext (mA) with Rext in k.
5: The  current is the additional current consumed when this peripheral is enabled. This current should be added to the base
I
DD or IPD measurement.
6: Commercial temperature range only.