Information

DS80011C-page 4

1999 Microchip Technology Inc.
PIC16C773
8. Module: LVD
The minimum levels (parameter D420) specified for
the LVD module differ from the Device Data Sheet as
follows:
Work Around
None.
TABLE 15-3 ELECTRICAL CHARACTERISTICS: LVD
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ T
A ≤ +70°C for commercial
Operating voltage V
DD range as described in DC spec Section 15.1 and Section 15.2.
Param
No.
Characteristic Symbol Min Typ† Max Units Conditions
D420
LVD Voltage
LVV = 0100 2.25 2.58 2.66 V
LVV = 0101 2.44 2.78 2.86 V
LVV = 0110 2.55 2.89 2.98 V
LVV = 0111 2.76 3.1 3.2 V
LVV = 1000 3.04 3.41 3.52 V
LVV = 1001 3.25 3.61 3.72 V
LVV = 1010 3.35 3.72 3.84 V
LVV = 1011 3.53 3.92 4.04 V
LVV = 1100 3.72 4.13 4.26 V
LVV = 1101 3.89 4.33 4.46 V
LVV = 1110 4.17 4.64 4.78 V
D421 Supply Current ∆I
LVD —1020 µA
D422* LVD Voltage Drift Temperature
coefficient
TCV
OUT —1550ppm/°C
D423* LVD Voltage Drift with respect to
V
DD Regulation
∆V
LVD/
∆V
DD
——50µV/V
D424* Low-voltage Detect Hysteresis V
LHYS TBD — 100 mV
* These parameters are characterized but not tested.
Note 1: Production tested at Tamb = 25°C. Specifications over temperature limits ensured by characterization.