Datasheet

 1997-2013 Microchip Technology Inc. DS30234E-page 283
PIC16C6X
Applicable Devices 61 62 62A R62 63 R63 64 64A R64 65 65A R65 66 67
FIGURE 23-18: TYPICAL IDD vs.
CAPACITANCE @ 500 kHz
(RC MODE)
TABLE 23-1: RC OSCILLATOR
FREQUENCIES
Cext Rext
Average
Fosc @ 5V, 25C
22 pF 5k 4.12 MHz ± 1.4%
10k 2.35 MHz ± 1.4%
100k 268 kHz ± 1.1%
100 pF 3.3k 1.80 MHz ± 1.0%
5k 1.27 MHz ± 1.0%
10k 688 kHz ± 1.2%
100k 77.2 kHz ± 1.0%
300 pF 3.3k 707 kHz ± 1.4%
5k 501 kHz ± 1.2%
10k 269 kHz ± 1.6%
100k 28.3 kHz ± 1.1%
The percentage variation indicated here is part to
part variation due to normal process distribution. The
variation indicated is ±3 standard deviation from
average value for V
DD = 5V.
Capacitance(pF)
600
IDD(A)
500
400
300
200
100
0
20 pF 100 pF 300 pF
5.0V
4.0V
3.0V
FIGURE 23-19: TRANSCONDUCTANCE(gm)
OF HS OSCILLATOR vs. V
DD
FIGURE 23-20: TRANSCONDUCTANCE(gm)
OF LP OSCILLATOR vs. V
DD
FIGURE 23-21: TRANSCONDUCTANCE(gm)
OF XT OSCILLATOR vs. V
DD
4.0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
gm(mA/V)
VDD(Volts)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max -40C
Typ 25C
Min 85C
Shaded area is
beyond recommended range
110
100
90
80
70
60
50
40
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
gm(A/V)
VDD(Volts)
Max -40C
Typ 25C
Min 85C
Shaded areas are
beyond recommended range
1000
900
800
700
600
500
400
300
200
100
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
gm(A/V)
VDD(Volts)
Max -40C
Typ 25C
Min 85C
Shaded areas are
beyond recommended range
Data based on matrix samples. See first page of this section for details.