Datasheet

1997-2013 Microchip Technology Inc. Preliminary DS30453E-page 107
PIC16C5X
IPD Power-down Current
(2)
D020 PIC16LC54A
2.5
0.25
15
7.0
A
A
VDD = 2.5V, WDT enabled,
Extended
V
DD = 2.5V, WDT disabled,
Extended
D020A PIC16C54A
5.0
0.8
22
18*
A
A
VDD = 3.5V, WDT enabled
V
DD = 3.5V, WDT disabled
15.2 DC Characteristics: PIC16C54A-04E, 10E, 20E (Extended)
PIC16LC54A-04E (Extended)
PIC16LC54A-04E
(Extended)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 40°C T
A +125C for extended
PIC16C54A-04E, 10E, 20E
(Extended)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 40°C T
A +125C for extended
Param
No.
Symbol Characteristic Min Typ Max Units Conditions
Legend: Rows with standard voltage device data only are shaded for improved readability.
* These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25C. This data is for design guid-
ance only and is not tested.
Note 1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all I
DD measurements in active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tristated, pulled to V
SS, T0CKI = VDD, MCLR = VDD; WDT enabled/
disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode. The power-down current in SLEEP mode does not depend on the oscillator type.
3: Does not include current through R
EXT. The current through the resistor can be estimated by the formula:
I
R = VDD/2REXT (mA) with REXT in k.