Datasheet
1996-2013 Microchip Technology Inc. Preliminary DS40143E-page 77
PIC16C55X
D020 IPD Power-Down Current
(3)
16LC55X — 0.7 2 AVDD = 3.0V, WDT disabled
16C55X — 1.0 2.5
15
A
A
VDD = 4.0V, WDT disabled
(+85C to +125C)
I
WDT WDT Current
(5)
16LC55X — 6.0 15 AVDD = 3.0V
16C55X — 6.0 20 A VDD = 4.0V
(+85C to +125C)
10.1 DC Characteristics: PIC16C55X-04 (Commercial, Industrial, Extended)
PIC16C55X-20 (Commercial, Industrial, Extended)
HCS1365-04 (Commercial, Industrial, Extended)
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40C T
A +85C for industrial and
0C T
A +70C for commercial and
-40C T
A +125C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
* These parameters are characterized but not tested.
† Data is “Typ” column is at 5V, 25C,unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins configured as input, pulled to V
DD,
MCLR
= VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins configured as input and tied to V
DD or VSS.
4: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be esti-
mated by the formula Ir = V
DD/2REXT (mA) with REXT in k
5: The current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.