Datasheet
2011 Microchip Technology Inc. Preliminary DS41576B-page 167
PIC12F752/HV752
20.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
(†)
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
DD with respect to VSS ................................................................................................... -0.3V to +6.5V
Voltage on MCLR
with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
SS ........................................................................... -0.3V to (VDD + 0.3V)
Total power dissipation
(1)
...............................................................................................................................800 mW
Maximum current out of V
SS pin ...................................................................................................................... 95 mA
Maximum current into V
DD pin ......................................................................................................................... 95 mA
Input clamp current, I
IK (VI < 0 or VI > VDD)20 mA
Output clamp current, I
OK (Vo < 0 or Vo >VDD)20 mA
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA................................................................................................................... 90 mA
Maximum current sourced PORTA .................................................................................................................. 90 mA
Note 1: Power dissipation is calculated as follows: P
DIS = VDD x {IDD – IOH} + {(VDD – VOH) x IOH} + (VOl x IOL).
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.