Datasheet
2011 Microchip Technology Inc. Preliminary DS41576B-page 173
PIC12F752/HV752
20.5 DC Characteristics: PIC12F752 - E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +125°C for extended
Param
No.
Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
D020E Power-down Base
Current (IPD)
(2)
PIC12F752
—0.1TBDA 2.0 WDT, BOR, Comparator, DAC and
FVR disabled
—0.3TBDA3.0
—0.5TBDA5.0
D021E — 3.0 TBD A 2.0 WDT Current
(1)
—4.0TBDA3.0
—7.0TBDA5.0
D022E — 5.0 TBD A 3.0 BOR Current
(1)
—6.0TBDA5.0
D023E — 362 TBD A 2.0 CxSP = 1, Comparator Current
(1)
,
single comparator enabled
—418TBDA3.0
—500TBDA5.0
D024E — 96 TBD A 2.0 CxSP = 0, Comparator Current
(1)
,
single comparator enabled
—112TBDA3.0
—132TBDA5.0
D025E — .03 TBD A 3.0 A/D Current
(1)
, no conversion in
progress
—0.36TBDA5.0
D026E — 0.2 TBD A 3.0 DAC Current
(1,3)
—0.4TBDA5.0
D027E — 59 TBD A 3.0 FVR Current
(1)
, FVRBUFEN = 1,
REFOUT buffer enabled
—98TBDA5.0
Legend: TBD = To Be Determined
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.
3: Both or one input reference are in high z-state.