Datasheet

© 2007 Microchip Technology Inc. DS41211D-page 123
PIC12F683
15.6 Thermal Considerations
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +125°C
Param
No.
Sym Characteristic Typ Units Conditions
TH01 θ
JA Thermal Resistance
Junction to Ambient
84.6 °C/W 8-pin PDIP package
163.0 °C/W 8-pin SOIC package
52.4 °C/W 8-pin DFN-S 4x4x0.9 mm package
46.3 °C/W 8-pin DFN-S 6x5 mm package
TH02 θ
JC Thermal Resistance
Junction to Case
41.2 °C/W 8-pin PDIP package
38.8 °C/W 8-pin SOIC package
3.0 °C/W 8-pin DFN-S 4x4x0.9 mm package
2.6 °C/W 8-pin DFN-S 6x5 mm package
TH03 T
J Junction Temperature 150 °C For derated power calculations
TH04 PD Power Dissipation W PD = PINTERNAL + PI/O
TH05 PINTERNAL Internal Power Dissipation W PINTERNAL = IDD x VDD
(NOTE 1)
TH06 P
I/O I/O Power Dissipation W PI/O = Σ (IOL * VOL) + Σ (IOH * (VDD - VOH))
TH07 PDER Derated Power W PDER = (TJ - TA)/θJA
(NOTE 2, 3)
Note 1: IDD is current to run the chip alone without driving any load on the output pins.
2: TA = Ambient Temperature.
3: Maximum allowable power dissipation is the lower value of either the absolute maximum total power
dissipation or derated power (P
DER).