Datasheet

PIC12F629/675

12.7 DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended)

(Cont.)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for industrial

-40°C ≤ TA ≤ +125°C for extended

Param

No.

Sym Characteristic Min Typ† Max Units Conditions

Capacitive Loading Specs

on Output Pins

D100 COSC2 OSC2 pin — — 15* pF In XT, HS and LP modes when

external clock is used to drive

OSC1

D101 CIO All I/O pins — — 50* pF

Data EEPROM Memory

D120 ED Byte Endurance 100K 1M — E/W -40°C ≤ TA ≤ +85°C

D120A ED Byte Endurance 10K 100K — E/W +85°C ≤ TA ≤ +125°C

D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write

VMIN = Minimum operating

voltage

D122 TDEW Erase/Write cycle time — 5 6 ms

D123 TRETD Characteristic Retention 40 — — Yea r Provided no other specifications

are violated

D124 TREF Number of Total Erase/Write

Cycles before Refresh

(1)

1M 10M — E/W -40°C ≤ TA ≤ +85°C

Program FLASH Memory

D130 EP Cell Endurance 10K 100K — E/W -40°C ≤ TA ≤ +85°C

D130A ED Cell Endurance 1K 10K — E/W +85°C ≤ TA ≤ +125°C

D131 VPR VDD for Read VMIN — 5.5 V VMIN = Minimum operating

voltage

D132 VPEW VDD for Erase/Write 4.5 — 5.5 V

D133 TPEW Erase/Write cycle time — 2 2.5 ms

D134 TRETD Characteristic Retention 40 — — Yea r Provided no other specifications

are violated

* These parameters are characterized but not tested.

† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: See Section 8.5.1 for additional information.