Datasheet

PIC12F629/675
DS41190E-page 88 © 2007 Microchip Technology Inc.
12.5 DC Characteristics: PIC12F629/675-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +125°C for extended
Param
No.
Device Characteristics Min Typ Max Units
Conditions
VDD Note
D020E Power-down Base Current
(I
PD)
0.00099 3.5 μA 2.0 WDT, BOD, Comparators, VREF,
and T1OSC disabled
0.0012 4.0 μA 3.0
0.0029 8.0 μA 5.0
D021E 0.3 6.0 μA 2.0 WDT Current
(1)
1.8 9.0 μA 3.0
8.4 20 μA 5.0
D022E 58 70 μA 3.0 BOD Current
(1)
109 130 μA 5.0
D023E 3.3 10 μA 2.0 Comparator Current
(1)
6.1 13 μA 3.0
11.5 24 μA 5.0
D024E 58 70 μA 2.0 CVREF Current
(1)
85 100 μA 3.0
138 165 μA 5.0
D025E 4.0 10 μA 2.0 T1 OSC Current
(1)
4.6 12 μA 3.0
6.0 20 μA 5.0
D026E 0.0012 6.0 μA 3.0 A/D Current
(1)
0.0022 8.5 μA 5.0
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD.