Datasheet

PIC12F629/675
DS41190E-page 86 © 2007 Microchip Technology Inc.
12.3 DC Characteristics: PIC12F629/675-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
Param
No.
Device Characteristics Min Typ Max Units
Conditions
VDD Note
D020 Power-down Base Current
(IPD)
0.99 700 nA 2.0 WDT, BOD, Comparators, VREF,
and T1OSC disabled
1.2 770 nA 3.0
2.9 995 nA 5.0
D021 0.3 1.5 μA 2.0 WDT Current
(1)
1.8 3.5 μA 3.0
8.4 17 μA 5.0
D022 58 70 μA 3.0 BOD Current
(1)
109 130 μA 5.0
D023 3.3 6.5 μA 2.0 Comparator Current
(1)
6.1 8.5 μA 3.0
11.5 16 μA 5.0
D024 58 70 μA 2.0 CVREF Current
(1)
85 100 μA 3.0
138 160 μA 5.0
D025 4.0 6.5 μA 2.0 T1 OSC Current
(1)
4.6 7.0 μA 3.0
6.0 10.5 μA 5.0
D026 1.2 775 nA 3.0 A/D Current
(1)
0.0022 1.0 μA 5.0
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD.