Datasheet

PIC12F629/675
DS41190G-page 94  2010 Microchip Technology Inc.
12.7 DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended) (Cont.)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Capacitive Loading Specs
on Output Pins
D100 C
OSC2 OSC2 pin — — 15* pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101 C
IO All I/O pins — — 50* pF
Data EEPROM Memory
D120 ED Byte Endurance 100K 1M — E/W -40C  TA +85°C
D120A E
D Byte Endurance 10K 100K — E/W +85°C  TA +125°C
D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write cycle time — 5 6 ms
D123 TRETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
1M 10M — E/W -40C  TA +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40C  TA +85°C
D130A E
D Cell Endurance 1K 10K — E/W +85°C  TA +125°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
PEW VDD for Erase/Write 4.5 — 5.5 V
D133 TPEW Erase/Write cycle time — 2 2.5 ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 “Using the Data EEPROM” for additional information.