Datasheet

2010 Microchip Technology Inc. DS41302D-page 149
PIC12F609/615/617/12HV609/615
16.5 DC Characteristics: PIC12F609/615/617 - E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +125°C for extended
Param
No.
Device Characteristics Min Typ† Max Units
Conditions
V
DD Note
D020E Power-down Base
Current (IPD)
(2)
PIC12F609/615/617
0.05 4.0 A 2.0 WDT, BOR, Comparator, V
REF and
T1OSC disabled
0.15 5.0 A3.0
0.35 8.5 A5.0
D021E 0.5 5.0 A 2.0 WDT Current
(1)
—2.58.0A3.0
—9.519 A5.0
D022E 5.0 15 A 3.0 BOR Current
(1)
—6.019 A5.0
D023E 50 70 A 2.0 Comparator Current
(1)
, single
comparator enabled
—5575A3.0
—6080A5.0
D024E 30 40 A2.0CV
REF Current
(1)
(high range)
—4560A3.0
—75105A5.0
D025E* 39 50 A2.0CV
REF Current
(1)
(low range)
—5980A3.0
—98130A5.0
D026E 5.5 16 A 2.0 T1OSC Current
(1)
, 32.768 kHz
—7.018 A3.0
—8.522 A5.0
D027E 0.2 6.5 A 3.0 A/D Current
(1)
, no conversion in
progress
—0.3610 A5.0
* These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral current can be determined by subtracting the base I
DD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.