Datasheet
2013-2015 Microchip Technology Inc. DS40001723D-page 15
PIC12(L)F1571/2
3.0 MEMORY ORGANIZATION
These devices contain the following types of memory:
• Program Memory:
- Configuration Words
- Device ID
-User ID
- Flash Program Memory
• Data Memory:
- Core Registers
- Special Function Registers
- General Purpose RAM
- Common RAM
The following features are associated with access and
control of program memory and data memory:
• PCL and PCLATH
•Stack
• Indirect Addressing
3.1 Program Memory Organization
The enhanced mid-range core has a 15-bit Program
Counter (PC) capable of addressing a 32K x 14 program
memory space. Table 3-1 shows the memory sizes
implemented. Accessing a location above these bound-
aries will cause a wraparound within the implemented
memory space. The Reset vector is at 0000h and the
interrupt vector is at 0004h (see Figure 3-1).
3.2 High-Endurance Flash
This device has a 128-byte section of high-endurance
Program Flash Memory (PFM) in lieu of data
EEPROM. This area is especially well-suited for non-
volatile data storage that is expected to be updated
frequently over the life of the end product. See
Section 10.2 “Flash Program Memory Overview”
for more information on writing data to PFM. See
Section 3.2.1.2 “Indirect Read with FSR” for more
information about using the FSR registers to read byte
data stored in PFM.
TABLE 3-1: DEVICE SIZES AND ADDRESSES
Device
Program Memory
Space (Words)
Last Program Memory
Address
High-Endurance Flash
Memory Address Range
(1)
PIC12(L)F1571 1,024 03FFh 0380h-03FFh
PIC12(L)F1572 2,048 07FFh 0780h-07FFh
Note 1: High-endurance Flash applies to the low byte of each address in the range.