Datasheet

Table Of Contents
2011 Microchip Technology Inc. Preliminary DS41615A-page 235
PIC12(L)F1501
27.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory Programming
Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 9.0 V (Note 2)
D111 IDDP Supply Current during Programming 10 mA
D112 V
BE VDD for Bulk Erase 2.7 VDD max. V
D113 V
PEW VDD for Write or Row Erase VDD min. VDD max. V
D114 I
PPPGM Current on MCLR/VPP during Erase/
Write
—1.0mA
D115 I
DDPGM Current on VDD during Erase/Write 5.0
—mA
Program Flash Memory
D121 E
P Cell Endurance 10K E/W -40C to +85C (Note 1)
D122 VPR VDD for Read VDD min. VDD max. V
D123 T
IW Self-timed Write Cycle Time 2 2.5 ms
D124 T
RETD Characteristic Retention 40 Year Provided no other
specifications are violated
D125 E
HEFC High-Endurance Flash Cell 100K E/W 0C to +60C,
Lower byte,
Last 128 Addresses in Flash
Memory
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.