Datasheet

Table Of Contents
2011 Microchip Technology Inc. Preliminary DS41615A-page 233
PIC12(L)F1501
27.3 DC Characteristics: PIC12(L)F1501-I/E (Power-Down) (Continued)
PIC12LF1501
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C
TA +125°C for extended
PIC12F1501
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C
TA +125°C for extended
Param
No.
Device Characteristics Min. Typ†
Max.
+85°C
Max.
+125°C
Units
Conditions
V
DD Note
Power-down Base Current (IPD) in Low-Power Sleep mode
(2)
D029A 0.1 1.5 2.0 A 2.3 Base
0.2 1.7 2.3 A 3.0
0.3 1.9 2.5 A 5.0
D029B 18 40 45 A 2.3 FVR Enabled
18.5 45 50 A 3.0
19 47 52 A 5.0
D029C 8.0 20 25 A 3.0 BOR Enabled
9.5 24 30 A 5.0
D029D 3.2 13 18 A 2.3 Comparator Enabled
(LP mode)
3.5 14 19 A 3.0
3.6 15 20 A 5.0
D029E 17.0 40 45 A 2.3 Comparator Enabled
(HP mode)
17.5 42 47 A 3.0
18.0 43 48 A 5.0
* These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Legend: TBD = To Be Determined
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is
enabled. The peripheral
current can be determined by subtracting the base IDD or IPD current from this limit. Max
values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with
the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD.
3: A/D oscillator source is FRC.