Datasheet

PIC12C5XX
DS40139E-page 66  1999 Microchip Technology Inc.
11.1 DC CHARACTERISTICS: PIC12C508/509 (Commercial, Industrial, Extended)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ T
A ≤ +85°C (industrial)
–40°C ≤ T
A ≤ +125°C (extended)
Parm
No.
Characteristic Sym Min
Typ
(1)
Max Units Conditions
D001 Supply Voltage V
DD 2.5
3.0
5.5
5.5
V
V
FOSC = DC to 4 MHz (Commercial/
Industrial)
F
OSC = DC to 4 MHz (Extended)
D002 RAM Data Retention
Voltage
(2)
VDR 1.5* V Device in SLEEP mode
D003 V
DD Start Voltage to
ensure Power-on Reset
VPOR VSS V See section on Power-on Reset for details
D004 V
DD Rise Rate to ensure
Power-on Reset
SVDD 0.05
*
V/ms See section on Power-on Reset for details
D010
D010C
D010A
Supply Current
(3)
IDD —
—
—
—
—
.78
1.1
10
14
14
2.4
2.4
27
35
35
mA
mA
µA
µA
µA
XT and EXTRC options
(4)
FOSC = 4 MHz, VDD = 5.5V
INTRC Option
F
OSC = 4 MHz, VDD = 5.5V
LP O
PTION, Commercial Temperature
F
OSC = 32 kHz, VDD = 3.0V, WDT disabled
LP O
PTION, Industrial Temperature
F
OSC = 32 kHz, VDD = 3.0V, WDT disabled
LP O
PTION, Extended Temperature
F
OSC = 32 kHz, VDD = 3.0V, WDT disabled
D020
D021
D021B
Power-Down Current
(5)
IPD —
—
—
0.25
0.25
2
4
5
18
µA
µA
µA
VDD = 3.0V, Commercial WDT disabled
V
DD = 3.0V, Industrial WDT disabled
V
DD = 3.0V, Extended WDT disabled
D022 ∆I
WDT —
—
—
3.75
3.75
3.75
8
9
14
µA
µA
µA
VDD = 3.0V, Commercial
V
DD = 3.0V, Industrial
V
DD = 3.0V, Extended
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
guidance only and is not tested.
2: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as
bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an
impact on the current consumption.
a) The test conditions for all I
DD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
V
ss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: I
R = VDD/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current
is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or
V
SS.