Datasheet

 2011 Microchip Technology Inc. Preliminary DS41585A-page 177
PIC10(L)F320/322
24.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory Programming
Specifications
D110
V
IHH Voltage on MCLR/VPP pin 8.0 — 9.0 V (Note 2, Note 3)
D111 IDDP Supply Current during Programming — — 10 mA
D112 V
DD for Bulk Erase 2.7 — VDD
max.
V
D113 V
PEW VDD for Write or Row Erase VDD
min.
—V
DD
max.
V
D114 I
PPPGM Current on MCLR/VPP during
Erase/Write
——1.0mA
D115 I
DDPGM Current on VDD during Erase/Write —
5.0 mA
Program Flash Memory
D121 EP Cell Endurance 10K — — E/W -40C to +85C (Note 1)
D122 V
PR VDD for Read VDD
min.
—V
DD
max.
V
D123 T
IW Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.
3: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be placed
between the ICD 2 and target system when programming or debugging with the ICD 2.