Datasheet

PIC10F200/202/204/206
DS41239A-page 68 Preliminary  2004 Microchip Technology Inc.
12.2 DC Characteristics: PIC10F200/202/204/206 (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C ≤ T
A ≤ +125°C (extended)
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
D001 V
DD Supply Voltage 2.0 5.5 V See Figure 12-1
D002 VDR RAM Data Retention Voltage
(2)
— 1.5* — V Device in Sleep mode
D003 V
POR VDD Start Voltage to ensure
Power-on Reset
—Vss— VSee Section 9.4 “DC Character-
istics” for details
D004 S
VDD VDD Rise Rate to ensure
Power-on Reset
0.05* — — V/ms See Section 9.4 “DC Character-
istics” for details
D010 I
DD Supply Current
(3)
—
—
170
350
TBD
TBD
µA
µA
FOSC = 4 MHz, VDD = 2.0V
F
OSC = 4 MHz, VDD = 5.0V
D020 I
PD Power-down Current
(4)
—0.1TBDµAVDD = 2.0V
D022 ∆IWDT WDT Current
(4)
—1.0TBDµAVDD = 2.0V
D023 ∆ICMP Comparator Current
(4)
—15TBDµAVDD = 2.0V
D024 ∆I
VREF Internal Reference Current
(4)
—TBDTBDµAVDD = 2.0V
Legend: TBD = To Be Determined.
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
guidance only and is not tested.
2: This is the limit to which V
DD can be lowered in Sleep mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, bus rate, internal code execution pattern and temperature also have an impact on the current
consumption.
a) The test conditions for all I
DD measurements in active operation mode are:
All I/O pins tri-stated, pulled to V
SS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
mode.
4: Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and
tied to V
DD or VSS.