Datasheet

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© 2011 Atmel Corporation. All rights reserved. / Rev.: MEM-MSL3082DB1-E-US_06-11
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REGISTER NAME
AND ADDRESS
POWER-UP CONDITION
REGISTERS INITIALIZED
FROM EEPROM
REGISTER DATA
D7 D6 D5 D4 D3 D2 D1 D0 HEX
0x10
0x17
ISTR0 thru
ISTR7
Individual peak string current 0 0 1 0 0 0 0 0 20
0x20
0x27
PHDLY0 thru
PHDLY7
All string phase delays set to zero processed GSC cycles 0 0 0 0 0 0 0 0 00
0x30
0x37
PWM0 thru
PWM7
All strings PWM settings equal 48 processed GSC cycles 0 0 1 1 0 0 0 0 30
0x40
GSCMAX Maximum GSC pulse count is 0
0 0 0 0 0 0 0 0 00
0x41 0 0 0 0 0 0 0 0 00
0x42
PHIMIN Minimum PHI pulse count is 0
0 0 0 0 0 0 0 0 00
0x43 0 0 0 0 0 0 0 0 00
0x47 FAULTEN Fault detection is enabled for all strings 1 1 1 1 1 1 1 1 FF
0x50 FBOCTRL0
Current source error conrmation delay is 4µs
FBO power supply settling time allowance is 8ms
Efciency Optimizer auto recalibration delay is 1s
Efciency Optimizer gives three steps for headroom
0 0 0 0 1 1 0 0 0C
0x51 FBOCTRL1
Current source error detection enabled
Auto recalibration disabled
String short circuit conrmation delay is 4µs
0 0 0 0 0 0 0 0 00
0x90 E2ADDR User EEPROM 7-bit address = 0x00 0 0 0 0 0 0 0 0 00
0x91 E2CTRLSTA User EEPROM read/write disabled 0 0 0 0 0 0 0 0 00
63
325.0
=
Sn
R